TY - JOUR
T1 - Crystal growth and structural characterizations of Ce-doped Gd9.33(SiO4)6O2 single crystals
AU - Ohgi, Y.
AU - Kagi, H.
AU - Arima, H.
AU - Ohta, A.
AU - Kamada, K.
AU - Yoshikawa, A.
AU - Sugiyama, K.
PY - 2009/1/15
Y1 - 2009/1/15
N2 - A new type of scintillator crystal, Ce-doped Gd9.33(SiO4)6O2 (Ce:GSAP), was grown by the micro-pulling-down (μ-PD) method. Single-crystal structural analysis coupled with X-ray absorption near-edge structure (XANES) analysis clearly implied the preference of Ce3+ at the 6h site in the Ce:GSAP structure. The X-ray excited luminescence spectra showed a peak around 410 nm originating from the Ce3+ 5d-4f transition. The corresponding decay time estimated was about 25 ns.
AB - A new type of scintillator crystal, Ce-doped Gd9.33(SiO4)6O2 (Ce:GSAP), was grown by the micro-pulling-down (μ-PD) method. Single-crystal structural analysis coupled with X-ray absorption near-edge structure (XANES) analysis clearly implied the preference of Ce3+ at the 6h site in the Ce:GSAP structure. The X-ray excited luminescence spectra showed a peak around 410 nm originating from the Ce3+ 5d-4f transition. The corresponding decay time estimated was about 25 ns.
KW - A1. Ce-doping
KW - A1. Crystal structure
KW - A1. Oxidation state
KW - A1. XANES
KW - A2. μ-PD method
KW - B2. Scintillator materials
UR - http://www.scopus.com/inward/record.url?scp=59649130478&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=59649130478&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2008.09.148
DO - 10.1016/j.jcrysgro.2008.09.148
M3 - Article
AN - SCOPUS:59649130478
SN - 0022-0248
VL - 311
SP - 526
EP - 529
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3
ER -