Crystal growth of Ce doped (Lu, Y) 3(Ga, Al) 5O 12 single crystal by the micro-puling-down method and their scintillation properties

Kei Kamada; Takayuki Yanagida; Jan Pejchal; Martin Nikl; Takanori Endo; Kousuke Tsutumi; Yutaka Fujimoto; Akihiro Fukabori; Akira Yoshikawa

doi:10.1109/TNS.2012.2184141

Crystal growth of Ce doped (Lu, Y) ₃(Ga, Al) ₅O ₁₂ single crystal by the micro-puling-down method and their scintillation properties

Kei Kamada, Takayuki Yanagida, Jan Pejchal, Martin Nikl, Takanori Endo, Kousuke Tsutumi, Yutaka Fujimoto, Akihiro Fukabori, Akira Yoshikawa

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Ce}:(Lu, Y) ₃(Ga, Al) ₅O ₁₂ single crystals were grown by the μ-PD method with RF heating system. In these crystals, Ce ³⁺ 4f-5d emission is observed within 500-530 nm wavelength. Emission peak shifts to shorter wavelength and the decay accelerates with increasing Ga concentration. In the case of Ce: (Lu ₂ Y ₁₃(Ga, Al) ₅O ₁₂ series, the Ce0.2% Lu ₂Y ₁Ga ₃Al ₂O ₁₂ crystal showed the highest emission intensity. In order to determine light yield, the energy spectra were measured under 662 keV ã-ray excitation ( ¹³⁷Cs source) and detection by an APD S8664-55(Hamamatsu). The light yield was calibrated from Fe ⁵⁵ direct irradiation peak to APD. The light yield of Ce0.2%: Lu ₂Y ₁Ga ₃Al ₂O ₃ sample was of about 30,000 photon/MeV. Dominant scintillation decay time was of about 50 ns.

Original language	English
Article number	6151861
Pages (from-to)	2116-2119
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	59
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/TNS.2012.2184141
Publication status	Published - 2012

Keywords

Crystals
luminescence
solid scintillation detectors

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.2012.2184141

Cite this

Kamada, K., Yanagida, T., Pejchal, J., Nikl, M., Endo, T., Tsutumi, K., Fujimoto, Y., Fukabori, A., & Yoshikawa, A. (2012). Crystal growth of Ce doped (Lu, Y) ₃(Ga, Al) ₅O ₁₂ single crystal by the micro-puling-down method and their scintillation properties. IEEE Transactions on Nuclear Science, 59(5 PART 2), 2116-2119. [6151861]. https://doi.org/10.1109/TNS.2012.2184141

Kamada, K, Yanagida, T, Pejchal, J, Nikl, M, Endo, T, Tsutumi, K, Fujimoto, Y, Fukabori, A & Yoshikawa, A 2012, 'Crystal growth of Ce doped (Lu, Y) ₃(Ga, Al) ₅O ₁₂ single crystal by the micro-puling-down method and their scintillation properties', IEEE Transactions on Nuclear Science, vol. 59, no. 5 PART 2, 6151861, pp. 2116-2119. https://doi.org/10.1109/TNS.2012.2184141

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title = "Crystal growth of Ce doped (Lu, Y) 3(Ga, Al) 5O 12 single crystal by the micro-puling-down method and their scintillation properties",

abstract = "Ce}:(Lu, Y) 3(Ga, Al) 5O 12 single crystals were grown by the μ-PD method with RF heating system. In these crystals, Ce 3+ 4f-5d emission is observed within 500-530 nm wavelength. Emission peak shifts to shorter wavelength and the decay accelerates with increasing Ga concentration. In the case of Ce: (Lu 2 Y 13(Ga, Al) 5O 12 series, the Ce0.2% Lu 2Y 1Ga 3Al 2O 12 crystal showed the highest emission intensity. In order to determine light yield, the energy spectra were measured under 662 keV {\~a}-ray excitation ( 137Cs source) and detection by an APD S8664-55(Hamamatsu). The light yield was calibrated from Fe 55 direct irradiation peak to APD. The light yield of Ce0.2%: Lu 2Y 1Ga 3Al 2O 3 sample was of about 30,000 photon/MeV. Dominant scintillation decay time was of about 50 ns.",

keywords = "Crystals, luminescence, solid scintillation detectors",

author = "Kei Kamada and Takayuki Yanagida and Jan Pejchal and Martin Nikl and Takanori Endo and Kousuke Tsutumi and Yutaka Fujimoto and Akihiro Fukabori and Akira Yoshikawa",

note = "Funding Information: Manuscript received November 04, 2011; revised January 05, 2012; accepted January 09, 2012. Date of publication February 13, 2012; date of current version October 09, 2012. This work was supported in part by JST Sentan, in part by a Grant in Aid for Young Scientists (B)-15686001, (A)-23686135, and Challenging Exploratory Research-23656584 from the Ministry of Education, Culture, Sports, Science, and Technology of the Japanese Government (MEXT), and in part by Czech AV M100100910 and GACR 202/08/0893 Projects.",

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doi = "10.1109/TNS.2012.2184141",

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T1 - Crystal growth of Ce doped (Lu, Y) 3(Ga, Al) 5O 12 single crystal by the micro-puling-down method and their scintillation properties

AU - Kamada, Kei

AU - Yanagida, Takayuki

AU - Pejchal, Jan

AU - Nikl, Martin

AU - Endo, Takanori

AU - Tsutumi, Kousuke

AU - Fujimoto, Yutaka

AU - Fukabori, Akihiro

AU - Yoshikawa, Akira

N1 - Funding Information: Manuscript received November 04, 2011; revised January 05, 2012; accepted January 09, 2012. Date of publication February 13, 2012; date of current version October 09, 2012. This work was supported in part by JST Sentan, in part by a Grant in Aid for Young Scientists (B)-15686001, (A)-23686135, and Challenging Exploratory Research-23656584 from the Ministry of Education, Culture, Sports, Science, and Technology of the Japanese Government (MEXT), and in part by Czech AV M100100910 and GACR 202/08/0893 Projects.

PY - 2012

Y1 - 2012

N2 - Ce}:(Lu, Y) 3(Ga, Al) 5O 12 single crystals were grown by the μ-PD method with RF heating system. In these crystals, Ce 3+ 4f-5d emission is observed within 500-530 nm wavelength. Emission peak shifts to shorter wavelength and the decay accelerates with increasing Ga concentration. In the case of Ce: (Lu 2 Y 13(Ga, Al) 5O 12 series, the Ce0.2% Lu 2Y 1Ga 3Al 2O 12 crystal showed the highest emission intensity. In order to determine light yield, the energy spectra were measured under 662 keV ã-ray excitation ( 137Cs source) and detection by an APD S8664-55(Hamamatsu). The light yield was calibrated from Fe 55 direct irradiation peak to APD. The light yield of Ce0.2%: Lu 2Y 1Ga 3Al 2O 3 sample was of about 30,000 photon/MeV. Dominant scintillation decay time was of about 50 ns.

AB - Ce}:(Lu, Y) 3(Ga, Al) 5O 12 single crystals were grown by the μ-PD method with RF heating system. In these crystals, Ce 3+ 4f-5d emission is observed within 500-530 nm wavelength. Emission peak shifts to shorter wavelength and the decay accelerates with increasing Ga concentration. In the case of Ce: (Lu 2 Y 13(Ga, Al) 5O 12 series, the Ce0.2% Lu 2Y 1Ga 3Al 2O 12 crystal showed the highest emission intensity. In order to determine light yield, the energy spectra were measured under 662 keV ã-ray excitation ( 137Cs source) and detection by an APD S8664-55(Hamamatsu). The light yield was calibrated from Fe 55 direct irradiation peak to APD. The light yield of Ce0.2%: Lu 2Y 1Ga 3Al 2O 3 sample was of about 30,000 photon/MeV. Dominant scintillation decay time was of about 50 ns.

KW - Crystals

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KW - solid scintillation detectors

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