TY - JOUR
T1 - Crystal growth of GaN by ammonothermal method
AU - Yoshikawa, A.
AU - Ohshima, E.
AU - Fukuda, T.
AU - Tsuji, H.
AU - Oshima, K.
PY - 2004/1/2
Y1 - 2004/1/2
N2 - GaN crystal could be grown by ammonothermal method using NH4Cl mineralizer. Inner wall of autoclave is covered with Pt so as to prevent possible contamination from autoclave. Reaction was carried out with supercritical ammonia at temperatures of 500°C and pressures of 135 MPa. Recrystallization of GaN was also confirmed under the condition of 500°C and 120 MPa, which is the lowest reaction pressure ever reported for GaN growth by ammonothermal method. These results show the possibility for the real industrial volume production of GaN by ammonothermal method.
AB - GaN crystal could be grown by ammonothermal method using NH4Cl mineralizer. Inner wall of autoclave is covered with Pt so as to prevent possible contamination from autoclave. Reaction was carried out with supercritical ammonia at temperatures of 500°C and pressures of 135 MPa. Recrystallization of GaN was also confirmed under the condition of 500°C and 120 MPa, which is the lowest reaction pressure ever reported for GaN growth by ammonothermal method. These results show the possibility for the real industrial volume production of GaN by ammonothermal method.
KW - A2. Ammono-thermal method
KW - Al. Supercritical
KW - B1. Ammonia
KW - B1. GaN
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U2 - 10.1016/j.jcrysgro.2003.08.031
DO - 10.1016/j.jcrysgro.2003.08.031
M3 - Article
AN - SCOPUS:0242439577
SN - 0022-0248
VL - 260
SP - 67
EP - 72
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-2
ER -