Crystal growth of GaN from Na-Ga melt in BN containers

Hisanori Yamane, Dai Kinno, Masahiko Shimada, Francis J. Disalvo

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17 Citations (Scopus)


A melt of Na and Ga with various Ga contents was placed in a BN crucible and reacted at 650°C for 300 h with N2 generated from the decomposition of NaN3 in a sealed stainless-steel tube. At 0.25 and 0.45 Ga molar fractions (rGa=Ga/(Ga+Na)), GaN precipitated at the interface of the melt and gas phases, and on the wall and bottom of the crucible. Platelet single crystals with a maximum size of 2 mm grew at the inside of the interface layer. The precipitates on the wall and bottom consisted of hexagonal columnar crystals elongated along the c-axis direction. The size of these crystals was about 10-20 μm at rGa=0.25 and 50-100 μn at rGa = 0.45. The morphology of the precipitates observed by scanning electron microscopy suggested that the columnar GaN crystals grew from the melt phase. At rGa = 0.65 and 0.85, thin GaN microcrystalline layers partially covered the Na-Ga melt surface, but the formation of bulk GaN was not observed in the BN crucible.

Original languageEnglish
Pages (from-to)925-929
Number of pages5
JournalJournal of the Ceramic Society of Japan
Issue number10
Publication statusPublished - 1999


  • Crystal growth
  • GaN
  • Morphology
  • Na flux
  • Na-Ga melt
  • Single crystal


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