Crystal structure and growth of carbon-silicon mixture film prepared by ion sputtering

Y. Kimura, M. Ishikawa, M. Kurumada, T. Tanigaki, H. Suzuki, C. Kaito

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


Si (10-50%)-containing carbon (C-Si) films were prepared by ion sputtering of carbon and silicon carbide mixture pellets. The C-Si film was composed of a solid-solution phase of carbon and silicon with a diamond structure. The film showed a higher transparency than a simultaneously evaporated C-Si mixture film. Diamond crystals 100 nm in diameter were also produced by vacuum heating of C-Si film at 800°C. The infrared spectrum showed significant absorption features at 9.5 and 21μm, in contrast to the 11 and 12μm of SiC. The 21μm feature is one of the candidate unidentified infrared bands on the spectra of carbon-rich post-asymptotic giant branch stars.

Original languageEnglish
Pages (from-to)e977-e981
JournalJournal of Crystal Growth
Issue number1-2
Publication statusPublished - 2005 Feb 15
Externally publishedYes


  • A1. Crystal structure
  • A1. Nanostructures
  • B1. Diamonds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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