@article{788867c4556543b48d235de4bae5225c,
title = "Crystal structure and thermoelectric properties of type-III clathrate compounds in the Ba-In-Ge system",
abstract = "The crystal structure and thermoelectric properties of type-III clathrate compounds in the Ba-In-Ge system have been investigated as a function of In content. The solid solubility of In in the type-III clathrate compounds is determined to be about X=15 when expressed with the formula of Ba24 InX Ge100-X. Similar to our recent results obtained for type-III clathrate compounds in Ba-Al-Ge and Ba-Ga-Ge systems, values of electrical resistivity, Seebeck coefficient, and electronic thermal conductivity of those in the Ba-In-Ge system generally increase with the increase in the In content because of the decrease in the number of excess electrons as described with the simple Zintl concept. The changes in their lattice thermal conductivity with the In content are explained in terms not only of the low rattling frequency of the guest atom but also of the low Debye temperature of the cage framework.",
author = "Kim, {Jung Hwan} and Okamoto, {Norihiko L.} and Kyosuke Kishida and Katsushi Tanaka and Haruyuki Inui",
note = "Funding Information: This work was supported by a Grant-in-Aid for Scientific Research (A) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan (No. 18206074) and in part by the 21st Century COE (Center of Excellence) Program on United Approach for New Materials Science from MEXT, Japan. One of the authors (J.H.K.) expresses his great appreciation for the Monbusho scholarship from MEXT, Japan. One of the authors (N.L.O.) also greatly appreciates the support from Research Fellowships of the Japan Society for the Promotion of Science for Young Scientists. The synchrotron radiation experiments were performed at Spring-8 with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) (Proposal Nos. 2006B1325 and 2007A2076).",
year = "2007",
doi = "10.1063/1.2803745",
language = "English",
volume = "102",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "9",
}