Crystal structures and spin injection signals of Si/Mg/MgO/Co2FeAl 0.5Si0.5 junctions

Takashi Onodera; Masahiro Yoshida; Nobuki Tezuka; Masashi Matsuura; Satoshi Sugimoto; Yoshiaki Saito

doi:10.2320/matertrans.M2013139

Crystal structures and spin injection signals of Si/Mg/MgO/Co2FeAl _0.5Si_0.5 junctions

Takashi Onodera, Masahiro Yoshida, Nobuki Tezuka, Masashi Matsuura, Satoshi Sugimoto, Yoshiaki Saito

Tohoku University

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigated the crystal structures and the spin injection signals of Si/Mg/MgO/Co₂FeAl_0.5Si_0.5 (CFAS) junctions deposited by molecule beam epitaxy. The (001)-orientation and the structural ordering of CFAS thin films changed by heating deposition of CFAS and the insertion of Mg layer into Si/MgO interface. Spin injection signals observed at 10K for the junctions by 3 terminals Hanle measurements. The maximum voltage change, ΔV_MAX, was increased by heating deposition of CFAS and the insertion of Mg layer. It is supposed that the enhancement of spin polarization by the improvement of structural ordering of CFAS or coherent tunneling by (001)-oriented MgO barrier caused the increment of ΔV _MAX.

Original language	English
Pages (from-to)	1392-1395
Number of pages	4
Journal	Materials Transactions
Volume	54
Issue number	8
DOIs	https://doi.org/10.2320/matertrans.M2013139
Publication status	Published - 2013

Keywords

(001)-oriented MgO
Heusler alloy
Silicon
Spintronics

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title = "Crystal structures and spin injection signals of Si/Mg/MgO/Co2FeAl 0.5Si0.5 junctions",

abstract = "We investigated the crystal structures and the spin injection signals of Si/Mg/MgO/Co2FeAl0.5Si0.5 (CFAS) junctions deposited by molecule beam epitaxy. The (001)-orientation and the structural ordering of CFAS thin films changed by heating deposition of CFAS and the insertion of Mg layer into Si/MgO interface. Spin injection signals observed at 10K for the junctions by 3 terminals Hanle measurements. The maximum voltage change, ΔVMAX, was increased by heating deposition of CFAS and the insertion of Mg layer. It is supposed that the enhancement of spin polarization by the improvement of structural ordering of CFAS or coherent tunneling by (001)-oriented MgO barrier caused the increment of ΔV MAX.",

keywords = "(001)-oriented MgO, Heusler alloy, Silicon, Spintronics",

author = "Takashi Onodera and Masahiro Yoshida and Nobuki Tezuka and Masashi Matsuura and Satoshi Sugimoto and Yoshiaki Saito",

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publisher = "Japan Institute of Metals (JIM)",

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TY - JOUR

T1 - Crystal structures and spin injection signals of Si/Mg/MgO/Co2FeAl 0.5Si0.5 junctions

AU - Onodera, Takashi

AU - Yoshida, Masahiro

AU - Tezuka, Nobuki

AU - Matsuura, Masashi

AU - Sugimoto, Satoshi

AU - Saito, Yoshiaki

PY - 2013

Y1 - 2013

N2 - We investigated the crystal structures and the spin injection signals of Si/Mg/MgO/Co2FeAl0.5Si0.5 (CFAS) junctions deposited by molecule beam epitaxy. The (001)-orientation and the structural ordering of CFAS thin films changed by heating deposition of CFAS and the insertion of Mg layer into Si/MgO interface. Spin injection signals observed at 10K for the junctions by 3 terminals Hanle measurements. The maximum voltage change, ΔVMAX, was increased by heating deposition of CFAS and the insertion of Mg layer. It is supposed that the enhancement of spin polarization by the improvement of structural ordering of CFAS or coherent tunneling by (001)-oriented MgO barrier caused the increment of ΔV MAX.

AB - We investigated the crystal structures and the spin injection signals of Si/Mg/MgO/Co2FeAl0.5Si0.5 (CFAS) junctions deposited by molecule beam epitaxy. The (001)-orientation and the structural ordering of CFAS thin films changed by heating deposition of CFAS and the insertion of Mg layer into Si/MgO interface. Spin injection signals observed at 10K for the junctions by 3 terminals Hanle measurements. The maximum voltage change, ΔVMAX, was increased by heating deposition of CFAS and the insertion of Mg layer. It is supposed that the enhancement of spin polarization by the improvement of structural ordering of CFAS or coherent tunneling by (001)-oriented MgO barrier caused the increment of ΔV MAX.

KW - (001)-oriented MgO

KW - Heusler alloy

KW - Silicon

KW - Spintronics

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DO - 10.2320/matertrans.M2013139

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JO - Materials Transactions

JF - Materials Transactions

IS - 8

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Crystal structures and spin injection signals of Si/Mg/MgO/Co2FeAl _0.5Si_0.5 junctions

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