TY - GEN
T1 - Crystalline Defects in Silicon Wafer Caused by Prolonged High-Temperature Annealing in Nitrogen Atmosphere
AU - Nakazawa, Haruo
AU - Ogino, Masaaki
AU - Teranishi, Hideaki
AU - Takahashi, Yoshikazu
AU - Habuka, Hitoshi
N1 - Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - A floating zone (FZ) silicon wafer produced from a Czochralski (CZ) single-crystal ingot was subjected to prolonged annealing at a high temperature. Precipitates were formed in a N2(70%)+O2(30%) ambient atmosphere. The precipitate regions manifested themselves as dark concentric rings in the X-ray topographs. According to the results of cross-sectional transmission electron microscopy observations and energy-dispersive X-ray spectroscopy elemental analyses, nitrogen was distributed throughout the precipitate regions, while oxygen was rich in the periphery of the regions. A high concentration of nitrogen was also directly detected by secondary ion mass spectrometry in the mid-depth of the wafer in the precipitate regions. Electron diffraction analysis of the precipitates showed that their phase was α-Si3N4.
AB - A floating zone (FZ) silicon wafer produced from a Czochralski (CZ) single-crystal ingot was subjected to prolonged annealing at a high temperature. Precipitates were formed in a N2(70%)+O2(30%) ambient atmosphere. The precipitate regions manifested themselves as dark concentric rings in the X-ray topographs. According to the results of cross-sectional transmission electron microscopy observations and energy-dispersive X-ray spectroscopy elemental analyses, nitrogen was distributed throughout the precipitate regions, while oxygen was rich in the periphery of the regions. A high concentration of nitrogen was also directly detected by secondary ion mass spectrometry in the mid-depth of the wafer in the precipitate regions. Electron diffraction analysis of the precipitates showed that their phase was α-Si3N4.
KW - Crystalline Defect
KW - Floating Zone Silicon Wafer
KW - Precipitate
KW - a-SiN
UR - http://www.scopus.com/inward/record.url?scp=84879652407&partnerID=8YFLogxK
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U2 - 10.4028/www.scientific.net/AMR.699.445
DO - 10.4028/www.scientific.net/AMR.699.445
M3 - Conference contribution
AN - SCOPUS:84879652407
SN - 9783037856758
T3 - Advanced Materials Research
SP - 445
EP - 449
BT - Materials Science and Chemical Engineering
T2 - 2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013
Y2 - 20 February 2013 through 21 February 2013
ER -