TY - JOUR
T1 - Crystalline phases, microstructures and electrical properties of hafnium oxide films deposited by sol-gel method
AU - Wang, Zhan Jie
AU - Kumagai, Toshihide
AU - Kokawa, Hiroyuki
AU - Tsuaur, Jiunnjye
AU - Ichiki, Masaaki
AU - Maeda, Ryutaro
N1 - Funding Information:
The support of this work by a Grant-in-Aid for Scientific Research (C) (No. 16560624) from the Japanese Ministry of Education, Culture, Sports, Science and Technology is most gratefully acknowledged.
PY - 2005/8/1
Y1 - 2005/8/1
N2 - Hafnium oxide (HfO2) films were grown on SiO2/Si and Pt/Ti/SiO2/Si substrates by a sol-gel method, and their crystalline structure, microstructure and electrical properties were investigated. XRD analysis indicated that the monoclinic HfO2 films can be obtained by annealing at 500 °C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO2 films of 300 nm was approximately 21.6, and the current-voltage measurements showed that the leakage current density of the HfO2 films was approximately 1.14×10-5 A/cm2 at an applied electric field of 100 kV/cm.
AB - Hafnium oxide (HfO2) films were grown on SiO2/Si and Pt/Ti/SiO2/Si substrates by a sol-gel method, and their crystalline structure, microstructure and electrical properties were investigated. XRD analysis indicated that the monoclinic HfO2 films can be obtained by annealing at 500 °C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO2 films of 300 nm was approximately 21.6, and the current-voltage measurements showed that the leakage current density of the HfO2 films was approximately 1.14×10-5 A/cm2 at an applied electric field of 100 kV/cm.
KW - A1. Crystal structure
KW - A1. X-ray diffraction
KW - B1. Oxides
KW - B2. Dielectric materials
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U2 - 10.1016/j.jcrysgro.2005.04.036
DO - 10.1016/j.jcrysgro.2005.04.036
M3 - Article
AN - SCOPUS:22144476901
SN - 0022-0248
VL - 281
SP - 452
EP - 457
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2-4
ER -