TY - GEN
T1 - Crystallinity dependence of grain and grain boundary strength of a bicrystal structure of copper
AU - Suzuki, Ken
AU - Fan, Yiqing
AU - Luo, Yifan
N1 - Funding Information:
This research activity has been supported partially by Japanese special coordination funds for promoting science and technology, Japanese Grants-in-aid for Scientific Research, and Tohoku University. This research was supported partly by JSPS KAKENHI Grant Number JP16H06357.
Publisher Copyright:
Copyright © 2020 ASME
PY - 2020
Y1 - 2020
N2 - Electroplated copper thin films often contain porous grain boundaries and the volume ratio of porous grain boundaries in the copper thin films is much larger than that in bulk copper. Thus, the lifetime of the interconnection components fabricated by electroplating is strongly dominated by the strength of grain boundaries because final fracture caused by the acceleration of atomic diffusion during electromigration (EM) occurs at grain boundaries in polycrystalline interconnections. It is important, therefore, to quantitatively evaluate the grain boundary strength of electroplated copper films for estimating the lifetime of the interconnection in order to assure the product reliability. In this study, relationship between the strength and crystallinity of electroplated copper thin films was investigated experimentally and theoretically. In order to investigate the relationship between the strength and grain boundary quality, molecular dynamics (MD) simulations were applied to analyze the deformation behavior of a bicrystal sample and its strength. The variation of the strength and deformation property were attributed to the higher defect density around grain boundaries.
AB - Electroplated copper thin films often contain porous grain boundaries and the volume ratio of porous grain boundaries in the copper thin films is much larger than that in bulk copper. Thus, the lifetime of the interconnection components fabricated by electroplating is strongly dominated by the strength of grain boundaries because final fracture caused by the acceleration of atomic diffusion during electromigration (EM) occurs at grain boundaries in polycrystalline interconnections. It is important, therefore, to quantitatively evaluate the grain boundary strength of electroplated copper films for estimating the lifetime of the interconnection in order to assure the product reliability. In this study, relationship between the strength and crystallinity of electroplated copper thin films was investigated experimentally and theoretically. In order to investigate the relationship between the strength and grain boundary quality, molecular dynamics (MD) simulations were applied to analyze the deformation behavior of a bicrystal sample and its strength. The variation of the strength and deformation property were attributed to the higher defect density around grain boundaries.
KW - Crystallinity
KW - Electroplated copper interconnection
KW - Molecular Dynamics
KW - Strength of a grain boundary
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U2 - 10.1115/IMECE2020-23757
DO - 10.1115/IMECE2020-23757
M3 - Conference contribution
AN - SCOPUS:85101243578
T3 - ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)
BT - Micro- and Nano-Systems Engineering and Packaging
PB - American Society of Mechanical Engineers (ASME)
T2 - ASME 2020 International Mechanical Engineering Congress and Exposition, IMECE 2020
Y2 - 16 November 2020 through 19 November 2020
ER -