Crystallinity of GaN film grown by ECR plasma-excited MOVPE

Hirotsugu Sato, Toru Sasaki, Takashi Matsuoka, Akinori Katsui

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


In the ECR plasma-excited MOVPE of GaN film, a strong correlation was found between carbon incorporation into the film and the crystallinity change from single crystal to polycrystal. Mass spectroscopic analysis showed that undissociated TMGa in the ECR plasma played an important role in the crystallinity change mechanism.

Original languageEnglish
Pages (from-to)1654-1655
Number of pages2
JournalJapanese Journal of Applied Physics
Issue number9R
Publication statusPublished - 1990 Sept


  • Carbon incorporation
  • Crystallinity change
  • ECR plasma-excited MOVPE
  • Gan
  • Mass spectrum
  • TMGa


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