Crystallinity of GaN film grown by ECR plasma-excited MOVPE

Hirotsugu Sato; Toru Sasaki; Takashi Matsuoka; Akinori Katsui

doi:10.1143/JJAP.29.1654

Crystallinity of GaN film grown by ECR plasma-excited MOVPE

Hirotsugu Sato, Toru Sasaki, Takashi Matsuoka, Akinori Katsui

New Industry Creation Hatchery Center (NICHe)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

In the ECR plasma-excited MOVPE of GaN film, a strong correlation was found between carbon incorporation into the film and the crystallinity change from single crystal to polycrystal. Mass spectroscopic analysis showed that undissociated TMGa in the ECR plasma played an important role in the crystallinity change mechanism.

Original language	English
Pages (from-to)	1654-1655
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	29
Issue number	9R
DOIs	https://doi.org/10.1143/JJAP.29.1654
Publication status	Published - 1990 Sept

Keywords

Carbon incorporation
Crystallinity change
ECR plasma-excited MOVPE
Gan
Mass spectrum
TMGa

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10.1143/JJAP.29.1654

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title = "Crystallinity of GaN film grown by ECR plasma-excited MOVPE",

abstract = "In the ECR plasma-excited MOVPE of GaN film, a strong correlation was found between carbon incorporation into the film and the crystallinity change from single crystal to polycrystal. Mass spectroscopic analysis showed that undissociated TMGa in the ECR plasma played an important role in the crystallinity change mechanism.",

keywords = "Carbon incorporation, Crystallinity change, ECR plasma-excited MOVPE, Gan, Mass spectrum, TMGa",

author = "Hirotsugu Sato and Toru Sasaki and Takashi Matsuoka and Akinori Katsui",

year = "1990",

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AU - Sato, Hirotsugu

AU - Sasaki, Toru

AU - Matsuoka, Takashi

AU - Katsui, Akinori

PY - 1990/9

Y1 - 1990/9

N2 - In the ECR plasma-excited MOVPE of GaN film, a strong correlation was found between carbon incorporation into the film and the crystallinity change from single crystal to polycrystal. Mass spectroscopic analysis showed that undissociated TMGa in the ECR plasma played an important role in the crystallinity change mechanism.

AB - In the ECR plasma-excited MOVPE of GaN film, a strong correlation was found between carbon incorporation into the film and the crystallinity change from single crystal to polycrystal. Mass spectroscopic analysis showed that undissociated TMGa in the ECR plasma played an important role in the crystallinity change mechanism.

KW - Carbon incorporation

KW - Crystallinity change

KW - ECR plasma-excited MOVPE

KW - Gan

KW - Mass spectrum

KW - TMGa

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JF - Japanese Journal of Applied Physics

IS - 9R

ER -

Crystallinity of GaN film grown by ECR plasma-excited MOVPE

Abstract

Keywords

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