TY - JOUR
T1 - Crystallite distribution analysis based on hydrogen content in thin-film nanocrystalline silicon solar cells by atom probe tomography
AU - Shimizu, Yasuo
AU - Sai, Hitoshi
AU - Matsui, Takuya
AU - Taki, Kenji
AU - Hashiguchi, Taiki
AU - Katayama, Hirotaka
AU - Matsumoto, Mitsuhiro
AU - Terakawa, Akira
AU - Inoue, Koji
AU - Nagai, Yasuyoshi
N1 - Funding Information:
Acknowledgments The authors would like to thank R. Shibahara of Tohoku University for providing technical support. This work was supported in part by New Energy and Industrial Technology Development Organization under Fig. 3. (Color online) (a) 5 nm sliced projected map of H atoms with isoconcentration surfaces at 4 at% for clearly visualizing crystalline/amorphous Si interfaces. (b) 2D contour maps of H (1 Da) and Si (14 and 28 Da) at the same depth as that in (a). (c) One-dimensional profile of H ratio across amorphous/ crystalline interface in the analytical volume (5 × 5 × 15 nm3) shown in (a).
Funding Information:
the Ministry of Economy, Trade and Industry, and in part by a JSPS KAKENHI grant (No. JP20K04613). ORCID iDs Yasuo Shimizu https://orcid.org/0000-0002-6844-8165 Hitoshi Sai https://orcid.org/0000-0002-2938-551X Takuya Matsui https://orcid.org/0000-0003-1589-7052
Publisher Copyright:
© 2020 The Japan Society of Applied Physics
PY - 2020/12/16
Y1 - 2020/12/16
N2 - The three-dimensional (3D) distribution of nanosized silicon (Si) crystallites within a hydrogenated nanocrystalline Si (nc-Si:H) material is examined by laser-assisted atom probe tomography (APT). The amorphous and crystalline phases in nc-Si:H are distinguished by obtaining the 3D density distribution of H atoms, because the former contains a high H density. The H content in the amorphous phase is estimated to be approximately 15 at% by APT, which is consistent with that obtained by infrared spectroscopy. Thus, the 3D analysis of H distribution via APT is a powerful method to visualize the real shape of nanosized crystallites within nc-Si:H materials.
AB - The three-dimensional (3D) distribution of nanosized silicon (Si) crystallites within a hydrogenated nanocrystalline Si (nc-Si:H) material is examined by laser-assisted atom probe tomography (APT). The amorphous and crystalline phases in nc-Si:H are distinguished by obtaining the 3D density distribution of H atoms, because the former contains a high H density. The H content in the amorphous phase is estimated to be approximately 15 at% by APT, which is consistent with that obtained by infrared spectroscopy. Thus, the 3D analysis of H distribution via APT is a powerful method to visualize the real shape of nanosized crystallites within nc-Si:H materials.
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U2 - 10.35848/1882-0786/abd13f
DO - 10.35848/1882-0786/abd13f
M3 - Article
AN - SCOPUS:85098728360
SN - 1882-0778
VL - 14
JO - Applied Physics Express
JF - Applied Physics Express
IS - 1
M1 - 016501
ER -