Crystallization and electrical characteristics of Ge 1Cu 2Te 3 films for phase change random access memory

Toshiya Kamada; Yuji Sutou; Masashi Sumiya; Yuta Saito; Junichi Koike

doi:10.1016/j.tsf.2012.02.025

Crystallization and electrical characteristics of Ge ₁Cu ₂Te ₃ films for phase change random access memory

Toshiya Kamada, Yuji Sutou, Masashi Sumiya, Yuta Saito, Junichi Koike

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

Phase change random access memory (PCRAM) requires an advanced phase change material to lower its power consumption and to enhance its data retention and endurance abilities. The present work investigated the crystallization behaviors and electrical properties of Ge ₁Cu ₂Te ₃ compound films with a low melting point of about 500 °C for PCRAM application. Sputter-deposited Ge ₁Cu ₂Te ₃ amorphous films showed a high crystallization temperature of about 250 °C. The Ge ₁Cu ₂Te ₃ amorphous film showed an electrical resistance decrease of over 10 ²-fold and exhibited a small increase in thickness of 2.0% upon crystallization. The Ge ₁Cu ₂Te ₃ memory devices showed reversible switching behaviors and exhibited a 10% lower power consumption for the reset operation than the conventional Ge ₂Sb ₂Te ₅ memory devices. Therefore, the Ge ₁Cu ₂Te ₃ compound is a promising phase change material for PCRAM application.

Original language	English
Pages (from-to)	4389-4393
Number of pages	5
Journal	Thin Solid Films
Volume	520
Issue number	13
DOIs	https://doi.org/10.1016/j.tsf.2012.02.025
Publication status	Published - 2012 Apr 30

Keywords

Crystallization
Ge-Cu-Te
Memory switching
Phase change material
Volume change

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2012.02.025

Cite this

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title = "Crystallization and electrical characteristics of Ge 1Cu 2Te 3 films for phase change random access memory",

abstract = "Phase change random access memory (PCRAM) requires an advanced phase change material to lower its power consumption and to enhance its data retention and endurance abilities. The present work investigated the crystallization behaviors and electrical properties of Ge 1Cu 2Te 3 compound films with a low melting point of about 500 °C for PCRAM application. Sputter-deposited Ge 1Cu 2Te 3 amorphous films showed a high crystallization temperature of about 250 °C. The Ge 1Cu 2Te 3 amorphous film showed an electrical resistance decrease of over 10 2-fold and exhibited a small increase in thickness of 2.0% upon crystallization. The Ge 1Cu 2Te 3 memory devices showed reversible switching behaviors and exhibited a 10% lower power consumption for the reset operation than the conventional Ge 2Sb 2Te 5 memory devices. Therefore, the Ge 1Cu 2Te 3 compound is a promising phase change material for PCRAM application.",

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T1 - Crystallization and electrical characteristics of Ge 1Cu 2Te 3 films for phase change random access memory

AU - Kamada, Toshiya

AU - Sutou, Yuji

AU - Sumiya, Masashi

AU - Saito, Yuta

AU - Koike, Junichi

PY - 2012/4/30

Y1 - 2012/4/30

N2 - Phase change random access memory (PCRAM) requires an advanced phase change material to lower its power consumption and to enhance its data retention and endurance abilities. The present work investigated the crystallization behaviors and electrical properties of Ge 1Cu 2Te 3 compound films with a low melting point of about 500 °C for PCRAM application. Sputter-deposited Ge 1Cu 2Te 3 amorphous films showed a high crystallization temperature of about 250 °C. The Ge 1Cu 2Te 3 amorphous film showed an electrical resistance decrease of over 10 2-fold and exhibited a small increase in thickness of 2.0% upon crystallization. The Ge 1Cu 2Te 3 memory devices showed reversible switching behaviors and exhibited a 10% lower power consumption for the reset operation than the conventional Ge 2Sb 2Te 5 memory devices. Therefore, the Ge 1Cu 2Te 3 compound is a promising phase change material for PCRAM application.

AB - Phase change random access memory (PCRAM) requires an advanced phase change material to lower its power consumption and to enhance its data retention and endurance abilities. The present work investigated the crystallization behaviors and electrical properties of Ge 1Cu 2Te 3 compound films with a low melting point of about 500 °C for PCRAM application. Sputter-deposited Ge 1Cu 2Te 3 amorphous films showed a high crystallization temperature of about 250 °C. The Ge 1Cu 2Te 3 amorphous film showed an electrical resistance decrease of over 10 2-fold and exhibited a small increase in thickness of 2.0% upon crystallization. The Ge 1Cu 2Te 3 memory devices showed reversible switching behaviors and exhibited a 10% lower power consumption for the reset operation than the conventional Ge 2Sb 2Te 5 memory devices. Therefore, the Ge 1Cu 2Te 3 compound is a promising phase change material for PCRAM application.

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KW - Memory switching

KW - Phase change material

KW - Volume change

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