Crystallization and re-melting of Si1-xGex alloy semiconductor during rapid cooling

Mukannan Arivanandhan, Genki Takakura, D. Sidharth, Maeda Kensaku, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Si0.7Ge0.3 was prepared by rapid cooling (∼330 °C/min)to get the fine grain structure for high thermoelectric performance. The same material was prepared under slow cooling (1 °C/min)for comparative analysis. The results were out of our expectation as the EBSD pattern revealed almost same grain structure of both samples. To know the reason for the similar grain structures, crystal growth of Si0.7Ge0.3 sample was in-situ observed under rapid and slow cooling. During rapid cooling, initially grown fine dendrites were completely re-melted and recrystallized on further cooling. No re-melting was occurred in Si under rapid cooling. Due to the growth of Si-rich Si1-xGex dendrites at high temperature the melt becomes Ge richer thereby initially grown fine dendrites were re-melted to reach equilibrium liquidus composition. Moreover, the similar grain structures of Si1-xGex under rapid cooling as well as slow cooling was originated from the re-melting of initially grown fine dendrites and recrystallization at relatively low temperature.

Original languageEnglish
Pages (from-to)493-499
Number of pages7
JournalJournal of Alloys and Compounds
Publication statusPublished - 2019 Aug 25


  • Grain structures
  • Rapid cooling
  • Re-melting
  • Si-Ge alloy


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