Crystallization behavior of Ge1Cu2Te3 amorphous film

Y. Sutou; T. Kamada; Y. Saito; M. Sumiya; J. Koike

doi:10.1557/proc-1251-h05-08

Crystallization behavior of Ge₁Cu₂Te₃ amorphous film

Y. Sutou, T. Kamada, Y. Saito, M. Sumiya, J. Koike

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The electrical resistance on the crystallization process of sputtered-deposited Ge₁Cu₂Te₃ film was investigated by a two-point probe method. It was found that the amorphous Ge₁Cu₂Te₃ film crystallized into a single Ge₁Cu₂Te₃ phase with a chalcopyrite structure, which lead to a large resistance drop. The crystallization temperature of the Ge₁Cu₂Te₃ amorphous film was about 250°C, which was about 70°C higher than the conventional Ge₂Sb ₂Te₅ amorphous film. The activation energy for the crystallization of the Ge₁Cu₂Te₃ amorphous film was higher than that of the Ge₂Sb₂Te₅ amorphous film. The Ge₁Cu₂Te₃ compound with a low melting point can be expected to be suitable as a phase change material for PCRAM.

Original language	English
Title of host publication	Phase-Change Materials for Memory and Reconfigurable Electronics Applications
Publisher	Materials Research Society
Pages	7-12
Number of pages	6
ISBN (Print)	9781617822186
DOIs	https://doi.org/10.1557/proc-1251-h05-08
Publication status	Published - 2010

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1251
ISSN (Print)	0272-9172

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-1251-h05-08

Cite this

@inproceedings{e08b0cf2ab3d4810a58625905c0ec310,

title = "Crystallization behavior of Ge1Cu2Te3 amorphous film",

abstract = "The electrical resistance on the crystallization process of sputtered-deposited Ge1Cu2Te3 film was investigated by a two-point probe method. It was found that the amorphous Ge1Cu2Te3 film crystallized into a single Ge1Cu2Te3 phase with a chalcopyrite structure, which lead to a large resistance drop. The crystallization temperature of the Ge1Cu2Te3 amorphous film was about 250°C, which was about 70°C higher than the conventional Ge2Sb 2Te5 amorphous film. The activation energy for the crystallization of the Ge1Cu2Te3 amorphous film was higher than that of the Ge2Sb2Te5 amorphous film. The Ge1Cu2Te3 compound with a low melting point can be expected to be suitable as a phase change material for PCRAM.",

author = "Y. Sutou and T. Kamada and Y. Saito and M. Sumiya and J. Koike",

year = "2010",

doi = "10.1557/proc-1251-h05-08",

language = "English",

isbn = "9781617822186",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "7--12",

booktitle = "Phase-Change Materials for Memory and Reconfigurable Electronics Applications",

}

TY - GEN

T1 - Crystallization behavior of Ge1Cu2Te3 amorphous film

AU - Sutou, Y.

AU - Kamada, T.

AU - Saito, Y.

AU - Sumiya, M.

AU - Koike, J.

PY - 2010

Y1 - 2010

N2 - The electrical resistance on the crystallization process of sputtered-deposited Ge1Cu2Te3 film was investigated by a two-point probe method. It was found that the amorphous Ge1Cu2Te3 film crystallized into a single Ge1Cu2Te3 phase with a chalcopyrite structure, which lead to a large resistance drop. The crystallization temperature of the Ge1Cu2Te3 amorphous film was about 250°C, which was about 70°C higher than the conventional Ge2Sb 2Te5 amorphous film. The activation energy for the crystallization of the Ge1Cu2Te3 amorphous film was higher than that of the Ge2Sb2Te5 amorphous film. The Ge1Cu2Te3 compound with a low melting point can be expected to be suitable as a phase change material for PCRAM.

AB - The electrical resistance on the crystallization process of sputtered-deposited Ge1Cu2Te3 film was investigated by a two-point probe method. It was found that the amorphous Ge1Cu2Te3 film crystallized into a single Ge1Cu2Te3 phase with a chalcopyrite structure, which lead to a large resistance drop. The crystallization temperature of the Ge1Cu2Te3 amorphous film was about 250°C, which was about 70°C higher than the conventional Ge2Sb 2Te5 amorphous film. The activation energy for the crystallization of the Ge1Cu2Te3 amorphous film was higher than that of the Ge2Sb2Te5 amorphous film. The Ge1Cu2Te3 compound with a low melting point can be expected to be suitable as a phase change material for PCRAM.

UR - http://www.scopus.com/inward/record.url?scp=79951998368&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951998368&partnerID=8YFLogxK

U2 - 10.1557/proc-1251-h05-08

DO - 10.1557/proc-1251-h05-08

M3 - Conference contribution

AN - SCOPUS:79951998368

SN - 9781617822186

T3 - Materials Research Society Symposium Proceedings

SP - 7

EP - 12

BT - Phase-Change Materials for Memory and Reconfigurable Electronics Applications

PB - Materials Research Society

ER -