Crystallization-Induced Stress in Amorphous Silicon Thin Films

Hideo Miura, Hiroyuki Ohta, Noriaki Okamoto, Toru Kaga

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


A New stress development mechanism in thin films, crystallizatin-induced stress, is discussed experimentally in P-doped amorphous silicon thin films. P-doped amorphous silicon thin films are deposited on thermally oxidized silicon wafers at 520°C using the CVD technique. The thickness of the oxide is 0.1 μm, and that of amorphous silicon is about 550 nm. The crystallization process, i. e., nucleation and growth of polycrystalline silicon, in the amorphous silicon thin films is observed using a scanning laser microscope. During the crystallization process of the amorphous silicon film, the silicon film shrinks and a large tensile stress of about 1000 MPa occurs in the film. The crystallization temperature of the P-doped amorphous silicon film decreases with higher P concentration. However, the crystallization-induced stress does not depend on the doped-P concentration. The developed stress decreases with high-temperature annealing at over 700°C. The stress relaxation ratio becomes higher in the higher P-doped films.

Original languageEnglish
Pages (from-to)1960-1965
Number of pages6
JournalNihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
Issue number554
Publication statusPublished - 1992


  • Amorphous Silicon
  • Crystallization
  • Experimental stress Analysis
  • Membrane Theory
  • Residual Stress
  • Thin Film


Dive into the research topics of 'Crystallization-Induced Stress in Amorphous Silicon Thin Films'. Together they form a unique fingerprint.

Cite this