Crystallization-induced stress in silicon thin films

Hideo Miura, Hiroyuki Ohta, Noriaki Okamoto, Toru Kaga

Research output: Contribution to journalArticlepeer-review

71 Citations (Scopus)


Residual stress change in silicon thin films during crystallization of amorphous silicon is discussed experimentally by detecting the wafer curvature change using a scanning laser microscope. The as-deposited amorphous-silicon film shows compressive stress of about 200 MPa. During a crystallization reaction at about 650°C, a large tensile stress of about 1000 MPa develops in the film due to film shrinkage. The final residual stress of polycrystalline film depends on the film formation process.

Original languageEnglish
Pages (from-to)2746-2748
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 1992


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