Crystallization of GeO2-SiC2 glass by poling with ArF-laser excitation

Syuji Matsumoto; Takumi Fujiwara; Motoshi Ohama; Akira J. Ikushima

doi:10.1364/OL.24.001404

Crystallization of GeO₂-SiC₂ glass by poling with ArF-laser excitation

Syuji Matsumoto, Takumi Fujiwara, Motoshi Ohama, Akira J. Ikushima

ENG - Applied Physics

Toyota Technological Institute

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We report on crystallization of 15.7GeO₂·84.3SiO₂ (in mol.%) glass by poling with ArF-laser excitation. The UV intensity was 100 (mJ/cm²)/pulse, and the number of shots was 10⁴. The crystallites that were observed in the glass were approximately 15-20 μm in diameter. The crystallization feature was dependent on the poling electric field, showing a threshold field of ∼0.5 x 10⁵ V/cm, beyond which crystallization occurred.

Original language	English
Pages (from-to)	1404-1406
Number of pages	3
Journal	Optics Letters
Volume	24
Issue number	20
DOIs	https://doi.org/10.1364/OL.24.001404
Publication status	Published - 1999 Oct 15

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abstract = "We report on crystallization of 15.7GeO2·84.3SiO2 (in mol.%) glass by poling with ArF-laser excitation. The UV intensity was 100 (mJ/cm2)/pulse, and the number of shots was 104. The crystallites that were observed in the glass were approximately 15-20 μm in diameter. The crystallization feature was dependent on the poling electric field, showing a threshold field of ∼0.5 x 105 V/cm, beyond which crystallization occurred.",

author = "Syuji Matsumoto and Takumi Fujiwara and Motoshi Ohama and Ikushima, {Akira J.}",

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AU - Matsumoto, Syuji

AU - Fujiwara, Takumi

AU - Ohama, Motoshi

AU - Ikushima, Akira J.

PY - 1999/10/15

Y1 - 1999/10/15

N2 - We report on crystallization of 15.7GeO2·84.3SiO2 (in mol.%) glass by poling with ArF-laser excitation. The UV intensity was 100 (mJ/cm2)/pulse, and the number of shots was 104. The crystallites that were observed in the glass were approximately 15-20 μm in diameter. The crystallization feature was dependent on the poling electric field, showing a threshold field of ∼0.5 x 105 V/cm, beyond which crystallization occurred.

AB - We report on crystallization of 15.7GeO2·84.3SiO2 (in mol.%) glass by poling with ArF-laser excitation. The UV intensity was 100 (mJ/cm2)/pulse, and the number of shots was 104. The crystallites that were observed in the glass were approximately 15-20 μm in diameter. The crystallization feature was dependent on the poling electric field, showing a threshold field of ∼0.5 x 105 V/cm, beyond which crystallization occurred.

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JO - Optics Letters

JF - Optics Letters

IS - 20

ER -

Crystallization of GeO₂-SiC₂ glass by poling with ArF-laser excitation

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