Crystallization of GeO2-SiC2 glass by poling with ArF-laser excitation

Syuji Matsumoto, Takumi Fujiwara, Motoshi Ohama, Akira J. Ikushima

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


We report on crystallization of 15.7GeO2·84.3SiO2 (in mol.%) glass by poling with ArF-laser excitation. The UV intensity was 100 (mJ/cm2)/pulse, and the number of shots was 104. The crystallites that were observed in the glass were approximately 15-20 μm in diameter. The crystallization feature was dependent on the poling electric field, showing a threshold field of ∼0.5 x 105 V/cm, beyond which crystallization occurred.

Original languageEnglish
Pages (from-to)1404-1406
Number of pages3
JournalOptics Letters
Issue number20
Publication statusPublished - 1999 Oct 15


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