Cu-Cu Bonding Challenges with 'i-ACF' for Advanced 3D Integration

Shunji Kurooka; Yoshinori Hotta; Ai Nakamura; Mitsumasa Koyanagi; Takahumi Fukushima

doi:10.1109/3DIC48104.2019.9058773

Cu-Cu Bonding Challenges with 'i-ACF' for Advanced 3D Integration

Shunji Kurooka, Yoshinori Hotta, Ai Nakamura, Mitsumasa Koyanagi, Takahumi Fukushima

ENG - Mechanical Systems Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, we demonstrated Cu-Cu bonding with an inorganic anisotropic conductive film called 'i-ACF' composed of an anodized aluminum oxide (AAO) film with a huge number of 60-nm-diameter Cu nano-pillars (CNPs). Lower-Temperature/pressure Cu-Cu bonding conditions below 250°C/50 MPa were achieved. When we employed a daisy chain consisting of 5, 096 Cu electrodes with a size of 28 μm, the resulting resistances of each joint were found to be 0.1 Ω. The key process was Cu-Cu bonding through the 'i-ACF' under a reducing atmosphere, which inhibited the oxidation of the CNPs. Consequently, the bonding temperature was able to be lowered down to 200°C.

Original language	English
Title of host publication	IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728148700
DOIs	https://doi.org/10.1109/3DIC48104.2019.9058773
Publication status	Published - 2019 Oct
Event	2019 IEEE International 3D Systems Integration Conference, 3DIC 2019 - Sendai, Japan Duration: 2019 Oct 8 → 2019 Oct 10

Publication series

Name	IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019

Conference

Conference	2019 IEEE International 3D Systems Integration Conference, 3DIC 2019
Country/Territory	Japan
City	Sendai
Period	19/10/8 → 19/10/10

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/3DIC48104.2019.9058773

Cite this

Kurooka, S., Hotta, Y., Nakamura, A., Koyanagi, M., & Fukushima, T. (2019). Cu-Cu Bonding Challenges with 'i-ACF' for Advanced 3D Integration. In IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019 [9058773] (IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/3DIC48104.2019.9058773

Cu-Cu Bonding Challenges with 'i-ACF' for Advanced 3D Integration. / Kurooka, Shunji; Hotta, Yoshinori; Nakamura, Ai et al.

IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 9058773 (IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kurooka, S, Hotta, Y, Nakamura, A, Koyanagi, M & Fukushima, T 2019, Cu-Cu Bonding Challenges with 'i-ACF' for Advanced 3D Integration. in IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019., 9058773, IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International 3D Systems Integration Conference, 3DIC 2019, Sendai, Japan, 19/10/8. https://doi.org/10.1109/3DIC48104.2019.9058773

Kurooka S, Hotta Y, Nakamura A, Koyanagi M, Fukushima T. Cu-Cu Bonding Challenges with 'i-ACF' for Advanced 3D Integration. In IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 9058773. (IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019). doi: 10.1109/3DIC48104.2019.9058773

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abstract = "In this work, we demonstrated Cu-Cu bonding with an inorganic anisotropic conductive film called 'i-ACF' composed of an anodized aluminum oxide (AAO) film with a huge number of 60-nm-diameter Cu nano-pillars (CNPs). Lower-Temperature/pressure Cu-Cu bonding conditions below 250°C/50 MPa were achieved. When we employed a daisy chain consisting of 5, 096 Cu electrodes with a size of 28 μm, the resulting resistances of each joint were found to be 0.1 Ω. The key process was Cu-Cu bonding through the 'i-ACF' under a reducing atmosphere, which inhibited the oxidation of the CNPs. Consequently, the bonding temperature was able to be lowered down to 200°C.",

author = "Shunji Kurooka and Yoshinori Hotta and Ai Nakamura and Mitsumasa Koyanagi and Takahumi Fukushima",

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AU - Fukushima, Takahumi

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Cu-Cu Bonding Challenges with 'i-ACF' for Advanced 3D Integration

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