Cu seeding using electroless deposition on Ru liner for high aspect ratio through-Si vias

Fumihiro Inoue; Harold Philipsen; Marleen H. Van Der Veen; Kevin Vandersmissen; Stefaan Van Huylenbroeck; Herbert Struyf; Tetsu Tanaka

doi:10.1109/3DIC.2014.7152147

Cu seeding using electroless deposition on Ru liner for high aspect ratio through-Si vias

Fumihiro Inoue, Harold Philipsen, Marleen H. Van Der Veen, Kevin Vandersmissen, Stefaan Van Huylenbroeck, Herbert Struyf, Tetsu Tanaka

MEN - Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

High aspect ratio through-Si vias (AR=16.7) filling has been achieved by using non-PVD seed metallization approach. We demonstrate the formation of conformal and thin electroless deposited Cu seed on Ru liner. The optimized ELD Cu process was conducted at room temperature on activated Ru surface, which can improve the ELD bath life time. The deposited Cu with 2,2' bipyridyl shows smoother and higher purity inside the Cu film.

Original language	English
Title of host publication	2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479984725
DOIs	https://doi.org/10.1109/3DIC.2014.7152147
Publication status	Published - 2014 Jan 1
Event	International 3D Systems Integration Conference, 3DIC 2014 - Kinsdale, Ireland Duration: 2014 Dec 1 → 2014 Dec 3

Publication series

Name	2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings

Other

Other	International 3D Systems Integration Conference, 3DIC 2014
Country/Territory	Ireland
City	Kinsdale
Period	14/12/1 → 14/12/3

Keywords

Cu seed
Elecroless deposition
High aspect ratio
Metallization
Through-Si Via

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Hardware and Architecture

Access to Document

10.1109/3DIC.2014.7152147

Cite this

Inoue, F., Philipsen, H., Van Der Veen, M. H., Vandersmissen, K., Van Huylenbroeck, S., Struyf, H., & Tanaka, T. (2014). Cu seeding using electroless deposition on Ru liner for high aspect ratio through-Si vias. In 2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings [07152147] (2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/3DIC.2014.7152147

Cu seeding using electroless deposition on Ru liner for high aspect ratio through-Si vias. / Inoue, Fumihiro; Philipsen, Harold; Van Der Veen, Marleen H. et al.
2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. 07152147 (2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Inoue, F, Philipsen, H, Van Der Veen, MH, Vandersmissen, K, Van Huylenbroeck, S, Struyf, H & Tanaka, T 2014, Cu seeding using electroless deposition on Ru liner for high aspect ratio through-Si vias. in 2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings., 07152147, 2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings, Institute of Electrical and Electronics Engineers Inc., International 3D Systems Integration Conference, 3DIC 2014, Kinsdale, Ireland, 14/12/1. https://doi.org/10.1109/3DIC.2014.7152147

Inoue F, Philipsen H, Van Der Veen MH, Vandersmissen K, Van Huylenbroeck S, Struyf H et al. Cu seeding using electroless deposition on Ru liner for high aspect ratio through-Si vias. In 2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2014. 07152147. (2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings). doi: 10.1109/3DIC.2014.7152147

Inoue, Fumihiro ; Philipsen, Harold ; Van Der Veen, Marleen H. et al. / Cu seeding using electroless deposition on Ru liner for high aspect ratio through-Si vias. 2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. (2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings).

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abstract = "High aspect ratio through-Si vias (AR=16.7) filling has been achieved by using non-PVD seed metallization approach. We demonstrate the formation of conformal and thin electroless deposited Cu seed on Ru liner. The optimized ELD Cu process was conducted at room temperature on activated Ru surface, which can improve the ELD bath life time. The deposited Cu with 2,2' bipyridyl shows smoother and higher purity inside the Cu film.",

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AU - Van Huylenbroeck, Stefaan

AU - Struyf, Herbert

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AB - High aspect ratio through-Si vias (AR=16.7) filling has been achieved by using non-PVD seed metallization approach. We demonstrate the formation of conformal and thin electroless deposited Cu seed on Ru liner. The optimized ELD Cu process was conducted at room temperature on activated Ru surface, which can improve the ELD bath life time. The deposited Cu with 2,2' bipyridyl shows smoother and higher purity inside the Cu film.

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Cu seeding using electroless deposition on Ru liner for high aspect ratio through-Si vias

Abstract

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Keywords

ASJC Scopus subject areas

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