TY - JOUR
T1 - Curie temperature versus hole concentration in field-effect structures of Ga1-x Mnx As
AU - Nishitani, Y.
AU - Chiba, D.
AU - Endo, M.
AU - Sawicki, M.
AU - Matsukura, F.
AU - Dietl, T.
AU - Ohno, H.
PY - 2010/1/27
Y1 - 2010/1/27
N2 - The Curie temperature TC is investigated as a function of the hole concentration p in thin films of ferromagnetic semiconductor (Ga,Mn)As. The magnetic properties are probed by transport measurements and p is varied by the application of an external electric field in a field-effect transistor configuration. It is found that TC ∼ pγ, where the exponent γ=0.19±0.02 over a wide range of Mn compositions and channel thicknesses. The magnitude of γ is reproduced by a p-d Zener model taking into account nonuniform hole distribution along the growth direction, determined by interface states and the applied gate electric fields.
AB - The Curie temperature TC is investigated as a function of the hole concentration p in thin films of ferromagnetic semiconductor (Ga,Mn)As. The magnetic properties are probed by transport measurements and p is varied by the application of an external electric field in a field-effect transistor configuration. It is found that TC ∼ pγ, where the exponent γ=0.19±0.02 over a wide range of Mn compositions and channel thicknesses. The magnitude of γ is reproduced by a p-d Zener model taking into account nonuniform hole distribution along the growth direction, determined by interface states and the applied gate electric fields.
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U2 - 10.1103/PhysRevB.81.045208
DO - 10.1103/PhysRevB.81.045208
M3 - Article
AN - SCOPUS:77954827654
SN - 1098-0121
VL - 81
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 4
M1 - 045208
ER -