TY - JOUR
T1 - Current-assisted domain wall motion in ferromagnetic semiconductors
AU - Yamanouchi, Michihiko
AU - Chiba, Daichi
AU - Matsukura, Fumihiro
AU - Ohno, Hideo
PY - 2006/5/9
Y1 - 2006/5/9
N2 - We investigated the effect of electrical currents on magnetization reversal in ferromagnetic semiconductors. We fabricated a Hall bar-shaped device with a stepped channel from (Ga,Mn)As and that with a partially gated channel from (In,Mn)As. These structures realize in-plane patterning of coercivity H C and allow us to study the dynamics of domain walls under application of currents by monitoring the Hall resistance. In both devices, we show that there exists a region, where its HC is strongly influenced by the direction of the applied current. In addition, we demonstrate the current induced domain wall movement under a fixed magnetic field. These phenomena can be observed at current density of 104 A/cm2 lower. Possible mechanisms are discussed
AB - We investigated the effect of electrical currents on magnetization reversal in ferromagnetic semiconductors. We fabricated a Hall bar-shaped device with a stepped channel from (Ga,Mn)As and that with a partially gated channel from (In,Mn)As. These structures realize in-plane patterning of coercivity H C and allow us to study the dynamics of domain walls under application of currents by monitoring the Hall resistance. In both devices, we show that there exists a region, where its HC is strongly influenced by the direction of the applied current. In addition, we demonstrate the current induced domain wall movement under a fixed magnetic field. These phenomena can be observed at current density of 104 A/cm2 lower. Possible mechanisms are discussed
KW - (Ga,Mn)As
KW - (In,Mn)As
KW - Current induced domain wall movement
KW - Field effect transistor
KW - Magnetic coercive force
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U2 - 10.1143/JJAP.45.3854
DO - 10.1143/JJAP.45.3854
M3 - Article
AN - SCOPUS:33646876199
SN - 0021-4922
VL - 45
SP - 3854
EP - 3859
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 5 A
ER -