Current-assisted domain wall motion in ferromagnetic semiconductors

Michihiko Yamanouchi, Daichi Chiba, Fumihiro Matsukura, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


We investigated the effect of electrical currents on magnetization reversal in ferromagnetic semiconductors. We fabricated a Hall bar-shaped device with a stepped channel from (Ga,Mn)As and that with a partially gated channel from (In,Mn)As. These structures realize in-plane patterning of coercivity H C and allow us to study the dynamics of domain walls under application of currents by monitoring the Hall resistance. In both devices, we show that there exists a region, where its HC is strongly influenced by the direction of the applied current. In addition, we demonstrate the current induced domain wall movement under a fixed magnetic field. These phenomena can be observed at current density of 104 A/cm2 lower. Possible mechanisms are discussed

Original languageEnglish
Pages (from-to)3854-3859
Number of pages6
JournalJapanese Journal of Applied Physics
Issue number5 A
Publication statusPublished - 2006 May 9


  • (Ga,Mn)As
  • (In,Mn)As
  • Current induced domain wall movement
  • Field effect transistor
  • Magnetic coercive force


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