Abstract
Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm-2, which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.
Original language | English |
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Pages (from-to) | 6141-6146 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 24 |
Issue number | 46 |
DOIs | |
Publication status | Published - 2012 Dec 4 |
Keywords
- ambipolar transistors
- light-emitting transistors
- organic transistors
- single-crystal transistors
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering