Current focusing in InSb heterostructures

A. R. Dedigama, D. Deen, S. Q. Murphy, N. Goel, J. C. Keay, M. B. Santos, K. Suzuki, S. Miyashita, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


We report transverse electron focusing in a symmetrically doped, InSb-based two-dimensional electron system. In a focusing device, the application of a perpendicular magnetic field steers the electron current from an injecting quantum point contact into a collector quantum point contact whenever the diameter of the cyclotron orbit corresponds to an integer fraction of the injector to collector spatial separation. In low-temperature measurements of in-plane gated devices, we observe peaks in the collector voltage at magnetic fields where focusing is expected. The first peak displays substructure which is preserved at temperatures as high as 10 K and under a variety of gating conditions. We speculate that this substructure originates from spatially distinct paths for electrons with different spin polarizations arising from the large Dresselhaus effect expected for InSb-based electron systems.

Original languageEnglish
Pages (from-to)647-650
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-2
Publication statusPublished - 2006 Aug


  • Dresselhaus effect
  • Electron focusing
  • InSb


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