TY - JOUR
T1 - Current-induced domain wall motion in magnetic nanowires with various widths down to less than 20nm
AU - Fukami, Shunsuke
AU - Iwabuchi, Toru
AU - Sato, Hideo
AU - Ohno, Hideo
N1 - Funding Information:
The authors wish to thank I. Morita, T. Hirata, H. Iwanuma, Y. Kawato, K. Goto, and C. Igarashi for technical support. This work was supported in part by R&D Project for ICT Key Technology of MEXT, ImPACT Program of CSTI, and JSPS KAKENHI Grant Number 15H05521.
Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/4
Y1 - 2016/4
N2 - We experimentally and theoretically study the current-induced domain wall motion in magnetic nanowires with various widths, and discuss the issues concerning the domain wall motion in wires with reduced widths down to less than 20 nm. For Co/Ni nanowires, the threshold current density significantly increases as the width decreases below 30nm and the domain wall motion is not observed within the studied current density range for a number of devices with the wire width of around 20 nm. The relationship between the threshold current density and wire width is reasonably reproduced by a theoretical calculation based on the adiabatic spin-transfer torque model. The micromagnetic simulation suggests that high-anisotropy materials are promising for domain-wall-motion devices with wire widths beyond 20 nm.
AB - We experimentally and theoretically study the current-induced domain wall motion in magnetic nanowires with various widths, and discuss the issues concerning the domain wall motion in wires with reduced widths down to less than 20 nm. For Co/Ni nanowires, the threshold current density significantly increases as the width decreases below 30nm and the domain wall motion is not observed within the studied current density range for a number of devices with the wire width of around 20 nm. The relationship between the threshold current density and wire width is reasonably reproduced by a theoretical calculation based on the adiabatic spin-transfer torque model. The micromagnetic simulation suggests that high-anisotropy materials are promising for domain-wall-motion devices with wire widths beyond 20 nm.
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U2 - 10.7567/JJAP.55.04EN01
DO - 10.7567/JJAP.55.04EN01
M3 - Article
AN - SCOPUS:84963653874
SN - 0021-4922
VL - 55
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4
M1 - 04EN01
ER -