Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field

N. Ohshima; H. Sato; S. Kanai; J. Llandro; S. Fukami; F. Matsukura; H. Ohno

doi:10.1063/1.4977224

Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field

N. Ohshima, H. Sato, S. Kanai, J. Llandro, S. Fukami, F. Matsukura, H. Ohno

Tohoku University

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We study current-induced magnetization switching properties of a magnetic tunnel junction with junction diameter of 19 nm and resistance-area product of 6 Ωμm2 in the nanosecond regime with and without in-plane magnetic field. At zero field, for both parallel (P)-to-anti-parallel (AP) and AP-to-P switchings, the probability of switching P_SW approaches unity with the increase of pulse voltage duration τP. However, under in-plane magnetic field, P_SW for P-to-AP switching starts to saturate at a value lower than unity with increasing τP, while AP-to-P switching remains the same as in the absence of in-plane magnetic field. This in-plane field dependence of P_SW can be partially explained by the influence of electric-field modulation of magnetic anisotropy.

Original language	English
Article number	055927
Journal	AIP Advances
Volume	7
Issue number	5
DOIs	https://doi.org/10.1063/1.4977224
Publication status	Published - 2017 May 1

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title = "Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field",

abstract = "We study current-induced magnetization switching properties of a magnetic tunnel junction with junction diameter of 19 nm and resistance-area product of 6 Ωμm2 in the nanosecond regime with and without in-plane magnetic field. At zero field, for both parallel (P)-to-anti-parallel (AP) and AP-to-P switchings, the probability of switching PSW approaches unity with the increase of pulse voltage duration τP. However, under in-plane magnetic field, PSW for P-to-AP switching starts to saturate at a value lower than unity with increasing τP, while AP-to-P switching remains the same as in the absence of in-plane magnetic field. This in-plane field dependence of PSW can be partially explained by the influence of electric-field modulation of magnetic anisotropy.",

author = "N. Ohshima and H. Sato and S. Kanai and J. Llandro and S. Fukami and F. Matsukura and H. Ohno",

note = "Funding Information: The authors thank C. Igarashi, T. Hirata, Y. Kawato, H. Iwanuma, and K. Goto for their technical support. This work was supported in part by the R&D Project for ICT Key Technology of MEXT, Grants-in-Aid for Scientific Research from JSPS (No. 16H06081), and the Cooperative Research Project of RIEC, Tohoku University. Publisher Copyright: {\textcopyright} 2017 Author(s).",

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doi = "10.1063/1.4977224",

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T1 - Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field

AU - Ohshima, N.

AU - Sato, H.

AU - Kanai, S.

AU - Llandro, J.

AU - Fukami, S.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: The authors thank C. Igarashi, T. Hirata, Y. Kawato, H. Iwanuma, and K. Goto for their technical support. This work was supported in part by the R&D Project for ICT Key Technology of MEXT, Grants-in-Aid for Scientific Research from JSPS (No. 16H06081), and the Cooperative Research Project of RIEC, Tohoku University. Publisher Copyright: © 2017 Author(s).

PY - 2017/5/1

Y1 - 2017/5/1

N2 - We study current-induced magnetization switching properties of a magnetic tunnel junction with junction diameter of 19 nm and resistance-area product of 6 Ωμm2 in the nanosecond regime with and without in-plane magnetic field. At zero field, for both parallel (P)-to-anti-parallel (AP) and AP-to-P switchings, the probability of switching PSW approaches unity with the increase of pulse voltage duration τP. However, under in-plane magnetic field, PSW for P-to-AP switching starts to saturate at a value lower than unity with increasing τP, while AP-to-P switching remains the same as in the absence of in-plane magnetic field. This in-plane field dependence of PSW can be partially explained by the influence of electric-field modulation of magnetic anisotropy.

AB - We study current-induced magnetization switching properties of a magnetic tunnel junction with junction diameter of 19 nm and resistance-area product of 6 Ωμm2 in the nanosecond regime with and without in-plane magnetic field. At zero field, for both parallel (P)-to-anti-parallel (AP) and AP-to-P switchings, the probability of switching PSW approaches unity with the increase of pulse voltage duration τP. However, under in-plane magnetic field, PSW for P-to-AP switching starts to saturate at a value lower than unity with increasing τP, while AP-to-P switching remains the same as in the absence of in-plane magnetic field. This in-plane field dependence of PSW can be partially explained by the influence of electric-field modulation of magnetic anisotropy.

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Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field

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