Current-induced magnetization switching under magnetic field applied along the hard axis in MgO-based magnetic tunnel junctions

T. Inokuchi; H. Sugiyama; Y. Saito; K. Inomata

doi:10.1063/1.2338016

Current-induced magnetization switching under magnetic field applied along the hard axis in MgO-based magnetic tunnel junctions

T. Inokuchi, H. Sugiyama, Y. Saito, K. Inomata

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The authors have investigated the dependence of the critical current density (J_c) for the current-induced magnetization switching (CIMS) on external magnetic fields applied along the hard axis of a free layer (H _hard) and on the duration of pulse current in MgO-based magnetic tunnel junctions. The J_c and the intrinsic current density (J _c0), derived from the dependence of the Jc on the pulse duration, decreased as |H_hard| increased. These reductions of J_c and J_c0 would be attributed to the decrease of energy barrier for CIMS and the increase of the spin transfer efficiency.

Original language	English
Article number	102502
Journal	Applied Physics Letters
Volume	89
Issue number	10
DOIs	https://doi.org/10.1063/1.2338016
Publication status	Published - 2006

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abstract = "The authors have investigated the dependence of the critical current density (Jc) for the current-induced magnetization switching (CIMS) on external magnetic fields applied along the hard axis of a free layer (H hard) and on the duration of pulse current in MgO-based magnetic tunnel junctions. The Jc and the intrinsic current density (J c0), derived from the dependence of the Jc on the pulse duration, decreased as |Hhard| increased. These reductions of Jc and Jc0 would be attributed to the decrease of energy barrier for CIMS and the increase of the spin transfer efficiency.",

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T1 - Current-induced magnetization switching under magnetic field applied along the hard axis in MgO-based magnetic tunnel junctions

AU - Inokuchi, T.

AU - Sugiyama, H.

AU - Saito, Y.

AU - Inomata, K.

PY - 2006

Y1 - 2006

N2 - The authors have investigated the dependence of the critical current density (Jc) for the current-induced magnetization switching (CIMS) on external magnetic fields applied along the hard axis of a free layer (H hard) and on the duration of pulse current in MgO-based magnetic tunnel junctions. The Jc and the intrinsic current density (J c0), derived from the dependence of the Jc on the pulse duration, decreased as |Hhard| increased. These reductions of Jc and Jc0 would be attributed to the decrease of energy barrier for CIMS and the increase of the spin transfer efficiency.

AB - The authors have investigated the dependence of the critical current density (Jc) for the current-induced magnetization switching (CIMS) on external magnetic fields applied along the hard axis of a free layer (H hard) and on the duration of pulse current in MgO-based magnetic tunnel junctions. The Jc and the intrinsic current density (J c0), derived from the dependence of the Jc on the pulse duration, decreased as |Hhard| increased. These reductions of Jc and Jc0 would be attributed to the decrease of energy barrier for CIMS and the increase of the spin transfer efficiency.

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VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102502

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Current-induced magnetization switching under magnetic field applied along the hard axis in MgO-based magnetic tunnel junctions

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