@inproceedings{2fcb176418bf4b68babe1cd9361a539d,
title = "Current-injection terahertz lasing in a distributed-feedback dual-gate graphene-channel transistor",
abstract = "This paper reviews recent advancement on the research toward graphene-based terahertz (THz) lasers. Optical and/ or injection pumping of graphene can enable negative-dynamic conductivity in the THz spectral range, which may lead to new types of THz lasers. A forward-biased graphene structure with a lateral p-i-n junction was implemented in a distributed-feedback (DFB) dual-gate graphene-channel FET and observed a single mode emission at 5.2 THz at 100K. The observed spectral linewidth fairly agrees with the modal gain analysis based on DFB-Fabry-Perrot hybrid-cavity-mode modeling. Although the results obtained are still preliminary level, the observed emission could be interpreted as THz lasing in population-inverted graphene by carrier-injection.",
keywords = "Current injection, Graphene, Lasers, P-i-n junction, Terahertz, Transistors",
author = "G. Tamamushi and T. Watanabe and J. Mitsushio and Dubinov, {A. A.} and A. Satou and T. Suemitsu and M. Ryzhii and V. Ryzhii and T. Otsuji",
note = "Funding Information: The authors thank V. Ya. Aleshkin, H. Wako, D. Yadav, H. Fukidome, M. Suemitsu, E. Sano, V. Mitin, and M.S. Shur for their contributions. We also thank T. Palacios and Q. Hu for valuable discussions. This work was financially supported in part by JSPS-KAKENHI (No. 23000008 and 16H06361), Japan. The work by A.D. was supported by the Dynasty Foundation, Russia. The DFB-DG-GFET process was done at the Nano-Spin facility, RIEC, Tohoku University, Japan. Publisher Copyright: {\textcopyright} 2017 SPIE.; Quantum Sensing and Nano Electronics and Photonics XIV 2017 ; Conference date: 29-01-2017 Through 02-02-2017",
year = "2017",
doi = "10.1117/12.2249983",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Manijeh Razeghi",
booktitle = "Quantum Sensing and Nano Electronics and Photonics XIV",
address = "United States",
}