TY - GEN
T1 - Current-injection terahertz lasing in distributed-feedback dual-gate graphene-channel field-effect transistor
AU - Tamamushi, Gen
AU - Watanabe, Takayuki
AU - Dubinov, Alexander A.
AU - Wako, Hiroyuki
AU - Satou, Akira
AU - Suemitsu, Tetsuya
AU - Ryzhii, Maxim
AU - Ryzhii, Victor
AU - Otsuji, Taiichi
PY - 2016/12/16
Y1 - 2016/12/16
N2 - A distributed-feedback (DFB) dual-gate graphene-channel transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees with calculation based on DFB-Fabry-Perrot hybrid-mode modeling.
AB - A distributed-feedback (DFB) dual-gate graphene-channel transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees with calculation based on DFB-Fabry-Perrot hybrid-mode modeling.
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M3 - Conference contribution
AN - SCOPUS:85010683449
T3 - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
BT - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
Y2 - 5 June 2016 through 10 June 2016
ER -