Current on-off operation of graphene transistor with dual gates and He ion irradiated channel

Shu Nakaharai; Tomohiko Iijima; Shinichi Ogawa; Song Lin Li; Kazuhito Tsukagoshi; Shintaro Sato; Naoki Yokoyama

doi:10.1002/pssc.201300262

Current on-off operation of graphene transistor with dual gates and He ion irradiated channel

Shu Nakaharai, Tomohiko Iijima, Shinichi Ogawa, Song Lin Li, Kazuhito Tsukagoshi, Shintaro Sato, Naoki Yokoyama

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We demonstrate the current on-off operation in a novel dual-gated transistor with a He ion irradiated graphene channel in which defect-induced transport gap is formed. The transistor operation was performed by controlling the band configuration of gate-controlled p-i-n junction by independent biasing of top gates. The maximum current on-off ratio of nearly four orders of magnitude was obtained at a temperature of 250 K in the proposed device structure. It was also demonstrated that the transistor polarity can be changed between unipolar and ambipolar just by adjusting the gate bias of one of the dual gates, as expected from the device operation model.

Original language	English
Pages (from-to)	1608-1611
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	10
Issue number	11
DOIs	https://doi.org/10.1002/pssc.201300262
Publication status	Published - 2013 Nov
Externally published	Yes

Keywords

Graphene
Ion irradiation
Transistor
Transport gap

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.201300262

Cite this

@article{aee353ba79c34e5b995fb77580fc531a,

title = "Current on-off operation of graphene transistor with dual gates and He ion irradiated channel",

abstract = "We demonstrate the current on-off operation in a novel dual-gated transistor with a He ion irradiated graphene channel in which defect-induced transport gap is formed. The transistor operation was performed by controlling the band configuration of gate-controlled p-i-n junction by independent biasing of top gates. The maximum current on-off ratio of nearly four orders of magnitude was obtained at a temperature of 250 K in the proposed device structure. It was also demonstrated that the transistor polarity can be changed between unipolar and ambipolar just by adjusting the gate bias of one of the dual gates, as expected from the device operation model.",

keywords = "Graphene, Ion irradiation, Transistor, Transport gap",

author = "Shu Nakaharai and Tomohiko Iijima and Shinichi Ogawa and Li, {Song Lin} and Kazuhito Tsukagoshi and Shintaro Sato and Naoki Yokoyama",

year = "2013",

month = nov,

doi = "10.1002/pssc.201300262",

language = "English",

volume = "10",

pages = "1608--1611",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "11",

}

TY - JOUR

T1 - Current on-off operation of graphene transistor with dual gates and He ion irradiated channel

AU - Nakaharai, Shu

AU - Iijima, Tomohiko

AU - Ogawa, Shinichi

AU - Li, Song Lin

AU - Tsukagoshi, Kazuhito

AU - Sato, Shintaro

AU - Yokoyama, Naoki

PY - 2013/11

Y1 - 2013/11

N2 - We demonstrate the current on-off operation in a novel dual-gated transistor with a He ion irradiated graphene channel in which defect-induced transport gap is formed. The transistor operation was performed by controlling the band configuration of gate-controlled p-i-n junction by independent biasing of top gates. The maximum current on-off ratio of nearly four orders of magnitude was obtained at a temperature of 250 K in the proposed device structure. It was also demonstrated that the transistor polarity can be changed between unipolar and ambipolar just by adjusting the gate bias of one of the dual gates, as expected from the device operation model.

AB - We demonstrate the current on-off operation in a novel dual-gated transistor with a He ion irradiated graphene channel in which defect-induced transport gap is formed. The transistor operation was performed by controlling the band configuration of gate-controlled p-i-n junction by independent biasing of top gates. The maximum current on-off ratio of nearly four orders of magnitude was obtained at a temperature of 250 K in the proposed device structure. It was also demonstrated that the transistor polarity can be changed between unipolar and ambipolar just by adjusting the gate bias of one of the dual gates, as expected from the device operation model.

KW - Graphene

KW - Ion irradiation

KW - Transistor

KW - Transport gap

UR - http://www.scopus.com/inward/record.url?scp=84887622076&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887622076&partnerID=8YFLogxK

U2 - 10.1002/pssc.201300262

DO - 10.1002/pssc.201300262

M3 - Article

AN - SCOPUS:84887622076

SN - 1862-6351

VL - 10

SP - 1608

EP - 1611

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 11

ER -

Current on-off operation of graphene transistor with dual gates and He ion irradiated channel

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this