CVD SiGe(C) epitaxial growth and its application to MOS devices

J. Murota; M. Sakuraba; T. Matsuura

doi:10.1109/ICSICT.2001.981533

CVD SiGe(C) epitaxial growth and its application to MOS devices

J. Murota, M. Sakuraba, T. Matsuura

RIEC - Computing System Platforms Division

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

By ultraclean low-pressure CVD using SiH₄ and GeH₄ gases, epitaxial growth of Si/Si_1-xGe_x/Si heterostructures with atomically flat surfaces and interfaces on Si[100] is achieved. The deposition rate, the Ge fraction and the in-situ doping characteristics with the PH₃, B₂H₆, or SiH₃CH₃ addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFETs have been also realized by selective epitaxy of impurity-doped Si_1-xGe_x on the source/drain regions.

Original language	English
Title of host publication	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Editors	Hiroshi Iwai, Paul Yu, Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	525-530
Number of pages	6
ISBN (Electronic)	0780365208, 9780780365209
DOIs	https://doi.org/10.1109/ICSICT.2001.981533
Publication status	Published - 2001
Event	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China Duration: 2001 Oct 22 → 2001 Oct 25

Publication series

Name	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Volume	1

Conference

Conference	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Country/Territory	China
City	Shanghai
Period	01/10/22 → 01/10/25

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10.1109/ICSICT.2001.981533

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Murota, J., Sakuraba, M., & Matsuura, T. (2001). CVD SiGe(C) epitaxial growth and its application to MOS devices. In H. Iwai, P. Yu, B-Z. Li, G-P. Ru, & X-P. Qu (Eds.), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings (pp. 525-530). Article 981533 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; Vol. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2001.981533

Murota, J. ; Sakuraba, M. ; Matsuura, T. / CVD SiGe(C) epitaxial growth and its application to MOS devices. 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. editor / Hiroshi Iwai ; Paul Yu ; Bing-Zong Li ; Guo-Ping Ru ; Xin-Ping Qu. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 525-530 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings).

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title = "CVD SiGe(C) epitaxial growth and its application to MOS devices",

abstract = "By ultraclean low-pressure CVD using SiH4 and GeH4 gases, epitaxial growth of Si/Si1-xGex/Si heterostructures with atomically flat surfaces and interfaces on Si[100] is achieved. The deposition rate, the Ge fraction and the in-situ doping characteristics with the PH3, B2H6, or SiH3CH3 addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFETs have been also realized by selective epitaxy of impurity-doped Si1-xGex on the source/drain regions.",

author = "J. Murota and M. Sakuraba and T. Matsuura",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 ; Conference date: 22-10-2001 Through 25-10-2001",

year = "2001",

doi = "10.1109/ICSICT.2001.981533",

language = "English",

series = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",

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pages = "525--530",

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}

Murota, J, Sakuraba, M & Matsuura, T 2001, CVD SiGe(C) epitaxial growth and its application to MOS devices. in H Iwai, P Yu, B-Z Li, G-P Ru & X-P Qu (eds), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings., 981533, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings, vol. 1, Institute of Electrical and Electronics Engineers Inc., pp. 525-530, 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001, Shanghai, China, 01/10/22. https://doi.org/10.1109/ICSICT.2001.981533

CVD SiGe(C) epitaxial growth and its application to MOS devices. / Murota, J.; Sakuraba, M.; Matsuura, T.
2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. ed. / Hiroshi Iwai; Paul Yu; Bing-Zong Li; Guo-Ping Ru; Xin-Ping Qu. Institute of Electrical and Electronics Engineers Inc., 2001. p. 525-530 981533 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Sakuraba, M.

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N2 - By ultraclean low-pressure CVD using SiH4 and GeH4 gases, epitaxial growth of Si/Si1-xGex/Si heterostructures with atomically flat surfaces and interfaces on Si[100] is achieved. The deposition rate, the Ge fraction and the in-situ doping characteristics with the PH3, B2H6, or SiH3CH3 addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFETs have been also realized by selective epitaxy of impurity-doped Si1-xGex on the source/drain regions.

AB - By ultraclean low-pressure CVD using SiH4 and GeH4 gases, epitaxial growth of Si/Si1-xGex/Si heterostructures with atomically flat surfaces and interfaces on Si[100] is achieved. The deposition rate, the Ge fraction and the in-situ doping characteristics with the PH3, B2H6, or SiH3CH3 addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFETs have been also realized by selective epitaxy of impurity-doped Si1-xGex on the source/drain regions.

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SP - 525

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BT - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

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A2 - Li, Bing-Zong

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A2 - Qu, Xin-Ping

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 22 October 2001 through 25 October 2001

ER -

Murota J, Sakuraba M, Matsuura T. CVD SiGe(C) epitaxial growth and its application to MOS devices. In Iwai H, Yu P, Li B-Z, Ru G-P, Qu X-P, editors, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2001. p. 525-530. 981533. (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings). doi: 10.1109/ICSICT.2001.981533

CVD SiGe(C) epitaxial growth and its application to MOS devices

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