CVD Si1-xGex epitaxial growth its application to MOS devices

Junichi Murota; Masao Sakuraba; Takashi Matsuura

CVD Si_1-xGe_x epitaxial growth its application to MOS devices

Junichi Murota, Masao Sakuraba, Takashi Matsuura

Information Devices Division

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

By ultraclean low-pressure CVD using SiH₄ and GeH₄ gases, high quality Si_1-xGe_x epitaxial growth on Si(100) is achieved. In order to prevent island growth and generation of misfit dislocations in the heterostructure, relatively low deposition temperatures and optimization of the layer thickness are inevitable for the high Ge fractions. Atomically flat surfaces and interfaces for the Si/Si_1-xGe_x/Si heterostructures containing Si_0.8Ge_0.2, Si_0.5Ge_0.5 and Si_0.3GE_0.7 layers are obtained by deposition at 550, 500 and 450°C, respectively. It is also found that the Si_0.5Ge_0.5-channel pMOSFET has the highest peak field-effect mobility. The deposition rate, the Ge fraction and the in-situ doping characteristics with the B₂H₆ and PH₃ addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFET's have been also realized by selective epitaxy of impurity-doped Si_1-xGe_x on the source/drain regions.

Original language	English
Pages (from-to)	33-45
Number of pages	13
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3881
Publication status	Published - 1999 Dec 1
Event	Proceedings of the 1999 Microelectronic Device Technology III - Santa Clara, CA, USA Duration: 1999 Sept 22 → 1999 Sept 23

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

@article{9b83e16bd3664937a367491e7b2b71b0,

title = "CVD Si1-xGex epitaxial growth its application to MOS devices",

abstract = "By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high quality Si1-xGex epitaxial growth on Si(100) is achieved. In order to prevent island growth and generation of misfit dislocations in the heterostructure, relatively low deposition temperatures and optimization of the layer thickness are inevitable for the high Ge fractions. Atomically flat surfaces and interfaces for the Si/Si1-xGex/Si heterostructures containing Si0.8Ge0.2, Si0.5Ge0.5 and Si0.3GE0.7 layers are obtained by deposition at 550, 500 and 450°C, respectively. It is also found that the Si0.5Ge0.5-channel pMOSFET has the highest peak field-effect mobility. The deposition rate, the Ge fraction and the in-situ doping characteristics with the B2H6 and PH3 addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFET's have been also realized by selective epitaxy of impurity-doped Si1-xGex on the source/drain regions.",

author = "Junichi Murota and Masao Sakuraba and Takashi Matsuura",

year = "1999",

month = dec,

day = "1",

language = "English",

volume = "3881",

pages = "33--45",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Microelectronic Device Technology III ; Conference date: 22-09-1999 Through 23-09-1999",

}

TY - JOUR

T1 - CVD Si1-xGex epitaxial growth its application to MOS devices

AU - Murota, Junichi

AU - Sakuraba, Masao

AU - Matsuura, Takashi

PY - 1999/12/1

Y1 - 1999/12/1

N2 - By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high quality Si1-xGex epitaxial growth on Si(100) is achieved. In order to prevent island growth and generation of misfit dislocations in the heterostructure, relatively low deposition temperatures and optimization of the layer thickness are inevitable for the high Ge fractions. Atomically flat surfaces and interfaces for the Si/Si1-xGex/Si heterostructures containing Si0.8Ge0.2, Si0.5Ge0.5 and Si0.3GE0.7 layers are obtained by deposition at 550, 500 and 450°C, respectively. It is also found that the Si0.5Ge0.5-channel pMOSFET has the highest peak field-effect mobility. The deposition rate, the Ge fraction and the in-situ doping characteristics with the B2H6 and PH3 addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFET's have been also realized by selective epitaxy of impurity-doped Si1-xGex on the source/drain regions.

AB - By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high quality Si1-xGex epitaxial growth on Si(100) is achieved. In order to prevent island growth and generation of misfit dislocations in the heterostructure, relatively low deposition temperatures and optimization of the layer thickness are inevitable for the high Ge fractions. Atomically flat surfaces and interfaces for the Si/Si1-xGex/Si heterostructures containing Si0.8Ge0.2, Si0.5Ge0.5 and Si0.3GE0.7 layers are obtained by deposition at 550, 500 and 450°C, respectively. It is also found that the Si0.5Ge0.5-channel pMOSFET has the highest peak field-effect mobility. The deposition rate, the Ge fraction and the in-situ doping characteristics with the B2H6 and PH3 addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFET's have been also realized by selective epitaxy of impurity-doped Si1-xGex on the source/drain regions.

UR - http://www.scopus.com/inward/record.url?scp=0033343827&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033343827&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033343827

SN - 0277-786X

VL - 3881

SP - 33

EP - 45

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Microelectronic Device Technology III

Y2 - 22 September 1999 through 23 September 1999

ER -

CVD Si_1-xGe_x epitaxial growth its application to MOS devices

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this