CW operation of DFB-BH GaInAsP/InP lasers in 1·5 µm wavelength region

T. Matsuoka; H. Nagai; Y. Itaya; Y. Noguchi; Y. Suzuki; T. Ikegami

doi:10.1049/el:19820020

CW operation of DFB-BH GaInAsP/InP lasers in 1·5 µm wavelength region

T. Matsuoka, H. Nagai, Y. Itaya, Y. Noguchi, Y. Suzuki, T. Ikegami

New Industry Creation Hatchery Center (NICHe)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

97 Citations (Scopus)

Abstract

Distributed-feedback buried heterostructure (DFB-BH) GalnAsP/lnP lasers in the 1·5 µm wavelength region have been operated continuously at heat-sink temperatures as high as 310 K. A threshold current of 55 mA at 300 K and single longitudinal mode operation have been obtained.

Original language	English
Pages (from-to)	27-28
Number of pages	2
Journal	Electronics Letters
Volume	18
Issue number	1
DOIs	https://doi.org/10.1049/el:19820020
Publication status	Published - 1982 Jan 7

Keywords

Lasers
Semiconductor lasers

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10.1049/el:19820020

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title = "CW operation of DFB-BH GaInAsP/InP lasers in 1·5 µm wavelength region",

abstract = "Distributed-feedback buried heterostructure (DFB-BH) GalnAsP/lnP lasers in the 1·5 µm wavelength region have been operated continuously at heat-sink temperatures as high as 310 K. A threshold current of 55 mA at 300 K and single longitudinal mode operation have been obtained.",

keywords = "Lasers, Semiconductor lasers",

author = "T. Matsuoka and H. Nagai and Y. Itaya and Y. Noguchi and Y. Suzuki and T. Ikegami",

year = "1982",

month = jan,

day = "7",

doi = "10.1049/el:19820020",

language = "English",

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journal = "Electronics Letters",

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T1 - CW operation of DFB-BH GaInAsP/InP lasers in 1·5 µm wavelength region

AU - Matsuoka, T.

AU - Nagai, H.

AU - Itaya, Y.

AU - Noguchi, Y.

AU - Suzuki, Y.

AU - Ikegami, T.

PY - 1982/1/7

Y1 - 1982/1/7

N2 - Distributed-feedback buried heterostructure (DFB-BH) GalnAsP/lnP lasers in the 1·5 µm wavelength region have been operated continuously at heat-sink temperatures as high as 310 K. A threshold current of 55 mA at 300 K and single longitudinal mode operation have been obtained.

AB - Distributed-feedback buried heterostructure (DFB-BH) GalnAsP/lnP lasers in the 1·5 µm wavelength region have been operated continuously at heat-sink temperatures as high as 310 K. A threshold current of 55 mA at 300 K and single longitudinal mode operation have been obtained.

KW - Lasers

KW - Semiconductor lasers

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U2 - 10.1049/el:19820020

DO - 10.1049/el:19820020

M3 - Article

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VL - 18

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JO - Electronics Letters

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IS - 1

ER -

CW operation of DFB-BH GaInAsP/InP lasers in 1·5 µm wavelength region

Abstract

Keywords

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