Czochralski growth of 2 in. Ca3Ta(Ga,Al)3Si2O14 single crystals for piezoelectric applications

Akira Yoshikawa, Yasuhiro Shoji, Yuji Ohashi, Yuui Yokota, Valery I. Chani, Masanori Kitahara, Tetsuo Kudo, Kei Kamada, Shunsuke Kurosawa, Andrey Medvedev, Vladimir Kochurikhin

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Growth of 2-in. diameter Al-substituted Ca3TaGa3Si2O14 crystals by Czochralski method is reported. The crystals were grown from the melt of Ca3TaGa1.5Al1.5Si2O14 composition and had langasite structure. No inclusions of secondary phases were detected in these crystals. The Ca3Ta(Ga,Al)3Si2O14 mixed crystals produced using non-substituted Ca3TaGa3Si2O14 seeds were defective. They had cracks and/or poly-crystalline structure. However, those grown on the seed of approximately Ca3TaGa1.5Al1.5Si2O14 composition were defect-free. Phase diagram of the Ca3TaGa3Si2O14–Ca3TaAl3Si2O14 pseudo-binary system and segregation phenomenon are discussed in some details. Homogeneity of the crystals was evaluated by measuring 2D-mapping of leaky surface acoustic wave (LSAW) velocities for Y-cut Ca3TaGa1.5Al1.5Si2O14 substrate. Although some inhomogeneities were observed due to slight variations in chemical composition, the crystal had acceptable homogeneity for applications in acoustic wave devices exhibiting the LSAW velocity variation within ±0.048%.

Original languageEnglish
Pages (from-to)135-140
Number of pages6
JournalJournal of Crystal Growth
Publication statusPublished - 2016 Oct 15


  • A1. Solid solutions
  • A2. Czochralski method
  • A2. Growth from melt
  • B2. Piezoelectric materials


Dive into the research topics of 'Czochralski growth of 2 in. Ca3Ta(Ga,Al)3Si2O14 single crystals for piezoelectric applications'. Together they form a unique fingerprint.

Cite this