Czochralski growth of 2 in. Ce-doped (La,Gd)2Si2O7 for scintillator application

Akira Yoshikawa, Yasuhiro Shoji, Shunsuke Kurosawa, Valery I. Chani, Rikito Murakami, Takahiko Horiai, Kei Kamada, Yuui Yokota, Yuji Ohashi, Vladimir Kochurikhin

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6 Citations (Scopus)


Growth of 2-in. diameter Ce-doped (La,Gd)2Si2O7 (La-GPS) scintillating crystals by Czochralski method using Ir crucible is reported. The composition of the host material was approximately equal to La0.5Gd1.5Si2O7 and the concentration of the Ce3+-activator was either 0.5 or 1.5 at.% with respect to the total content of the rare-earths forming the host crystal matrix. Effects of the hot zone construction including inductive coil position, presence/absence of the after-heater, rotation rate and other growth parameters on the crystal quality are discussed in some details. The crystals produced in optimized conditions were colorless, transparent, uniform in their shape, crack- and inclusions-free, and demonstrated smooth glass-like surface. The length of the crystals’ cylindrically-shaped body parts exceed 100 mm. The growth results were well reproducible. The main disadvantage of the growth process is associated with short lifetime of the Ir crucible and its deformation caused by thermal expansion of the pre-solidified melt at each heating stage.

Original languageEnglish
Pages (from-to)57-64
Number of pages8
JournalJournal of Crystal Growth
Publication statusPublished - 2016 Oct 15


  • A1. Solid solutions
  • A2. Czochralski method
  • A2. Growth from melt
  • B2. Scintillator materials


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