Czochralski growth of 4-inch diameter Ce:Gd3Al2Ga3O12 single crystals for scintillator applications

Vladimir Kochurikhin; Kei Kamada; Kyoung Jin Kim; Mikhail Ivanov; Liudmila Gushchina; Yasuhiro Shoji; Masao Yoshino; Akira Yoshikawa

doi:10.1016/j.jcrysgro.2019.125384

Czochralski growth of 4-inch diameter Ce:Gd₃Al₂Ga₃O₁₂ single crystals for scintillator applications

Vladimir Kochurikhin, Kei Kamada, Kyoung Jin Kim, Mikhail Ivanov, Liudmila Gushchina, Yasuhiro Shoji, Masao Yoshino, Akira Yoshikawa

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Ce-doped Gd₃Al₂Ga₃O₁₂ single crystals 4 in. in diameter were grown by the Czochralski technique. Three main growth problems were identified: formation of Ir particles on the surface of the melt, Ga oxide evaporation and crystal cracking during the cooling stage. These problems were solved by careful selection of the ceramic hot zone, shift of the growth atmosphere from Ar + O₂ to N₂ + CO₂ and application of an original post-growth cooling technique. It was found possible to grow up to five sequential 4-inch crystals from the same melt without any notable decrease in the scintillation properties. The optimal solidification fraction (0.23) was found. Additionally, a 4-inch Mg,Ce co-doped Gd₃Al₂Ga₃O₁₂ crystal was grown under the same conditions.

Original language	English
Article number	125384
Journal	Journal of Crystal Growth
Volume	531
DOIs	https://doi.org/10.1016/j.jcrysgro.2019.125384
Publication status	Published - 2020 Feb 1

Keywords

A2. Czochralski method
A2. Single crystal growth
B1. Oxides
B2. Scintillator materials

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10.1016/j.jcrysgro.2019.125384

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@article{0ce326863fe340838df55fc2454366fb,

title = "Czochralski growth of 4-inch diameter Ce:Gd3Al2Ga3O12 single crystals for scintillator applications",

abstract = "Ce-doped Gd3Al2Ga3O12 single crystals 4 in. in diameter were grown by the Czochralski technique. Three main growth problems were identified: formation of Ir particles on the surface of the melt, Ga oxide evaporation and crystal cracking during the cooling stage. These problems were solved by careful selection of the ceramic hot zone, shift of the growth atmosphere from Ar + O2 to N2 + CO2 and application of an original post-growth cooling technique. It was found possible to grow up to five sequential 4-inch crystals from the same melt without any notable decrease in the scintillation properties. The optimal solidification fraction (0.23) was found. Additionally, a 4-inch Mg,Ce co-doped Gd3Al2Ga3O12 crystal was grown under the same conditions.",

keywords = "A2. Czochralski method, A2. Single crystal growth, B1. Oxides, B2. Scintillator materials",

author = "Vladimir Kochurikhin and Kei Kamada and {Jin Kim}, Kyoung and Mikhail Ivanov and Liudmila Gushchina and Yasuhiro Shoji and Masao Yoshino and Akira Yoshikawa",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2020",

month = feb,

day = "1",

doi = "10.1016/j.jcrysgro.2019.125384",

language = "English",

volume = "531",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Czochralski growth of 4-inch diameter Ce:Gd3Al2Ga3O12 single crystals for scintillator applications

AU - Kochurikhin, Vladimir

AU - Kamada, Kei

AU - Jin Kim, Kyoung

AU - Ivanov, Mikhail

AU - Gushchina, Liudmila

AU - Shoji, Yasuhiro

AU - Yoshino, Masao

AU - Yoshikawa, Akira

PY - 2020/2/1

Y1 - 2020/2/1

N2 - Ce-doped Gd3Al2Ga3O12 single crystals 4 in. in diameter were grown by the Czochralski technique. Three main growth problems were identified: formation of Ir particles on the surface of the melt, Ga oxide evaporation and crystal cracking during the cooling stage. These problems were solved by careful selection of the ceramic hot zone, shift of the growth atmosphere from Ar + O2 to N2 + CO2 and application of an original post-growth cooling technique. It was found possible to grow up to five sequential 4-inch crystals from the same melt without any notable decrease in the scintillation properties. The optimal solidification fraction (0.23) was found. Additionally, a 4-inch Mg,Ce co-doped Gd3Al2Ga3O12 crystal was grown under the same conditions.

AB - Ce-doped Gd3Al2Ga3O12 single crystals 4 in. in diameter were grown by the Czochralski technique. Three main growth problems were identified: formation of Ir particles on the surface of the melt, Ga oxide evaporation and crystal cracking during the cooling stage. These problems were solved by careful selection of the ceramic hot zone, shift of the growth atmosphere from Ar + O2 to N2 + CO2 and application of an original post-growth cooling technique. It was found possible to grow up to five sequential 4-inch crystals from the same melt without any notable decrease in the scintillation properties. The optimal solidification fraction (0.23) was found. Additionally, a 4-inch Mg,Ce co-doped Gd3Al2Ga3O12 crystal was grown under the same conditions.

KW - A2. Czochralski method

KW - A2. Single crystal growth

KW - B1. Oxides

KW - B2. Scintillator materials

UR - http://www.scopus.com/inward/record.url?scp=85076022105&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85076022105&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2019.125384

DO - 10.1016/j.jcrysgro.2019.125384

M3 - Article

AN - SCOPUS:85076022105

SN - 0022-0248

VL - 531

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

M1 - 125384

ER -

Czochralski growth of 4-inch diameter Ce:Gd₃Al₂Ga₃O₁₂ single crystals for scintillator applications

Abstract

Keywords

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