TY - JOUR
T1 - Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities
AU - Taishi, Toshinori
AU - Ise, Hideaki
AU - Murao, Yu
AU - Osawa, Takayuki
AU - Suezawa, Masashi
AU - Tokumoto, Yuki
AU - Ohno, Yutaka
AU - Hoshikawa, Keigo
AU - Yonenaga, Ichiro
PY - 2010/9/15
Y1 - 2010/9/15
N2 - Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B2O 3) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm-1 in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B2O3 liquid was about 1016 cm-3 and was almost the same as that in a Ge crystal grown without B2O 3. Oxygen concentration in a Ge crystal was enhanced to be greater than 1017 cm-3 by growing a crystal from a melt fully covered with B2O3; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×1017 cm-3. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.
AB - Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B2O 3) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm-1 in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B2O3 liquid was about 1016 cm-3 and was almost the same as that in a Ge crystal grown without B2O 3. Oxygen concentration in a Ge crystal was enhanced to be greater than 1017 cm-3 by growing a crystal from a melt fully covered with B2O3; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×1017 cm-3. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.
KW - A1. Doping
KW - A1. Oxygen impurity
KW - A2. Czochralski method
KW - A2. Single crystal growth
KW - B2. Semiconducting germanium
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U2 - 10.1016/j.jcrysgro.2010.05.045
DO - 10.1016/j.jcrysgro.2010.05.045
M3 - Article
AN - SCOPUS:77956183465
SN - 0022-0248
VL - 312
SP - 2783
EP - 2787
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 19
ER -