Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Toshinori Taishi, Hideaki Ise, Yu Murao, Takayuki Osawa, Masashi Suezawa, Yuki Tokumoto, Yutaka Ohno, Keigo Hoshikawa, Ichiro Yonenaga

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16 Citations (Scopus)


Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B2O 3) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm-1 in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B2O3 liquid was about 1016 cm-3 and was almost the same as that in a Ge crystal grown without B2O 3. Oxygen concentration in a Ge crystal was enhanced to be greater than 1017 cm-3 by growing a crystal from a melt fully covered with B2O3; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×1017 cm-3. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.

Original languageEnglish
Pages (from-to)2783-2787
Number of pages5
JournalJournal of Crystal Growth
Issue number19
Publication statusPublished - 2010 Sept 15


  • A1. Doping
  • A1. Oxygen impurity
  • A2. Czochralski method
  • A2. Single crystal growth
  • B2. Semiconducting germanium

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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