TY - JOUR
T1 - Czochralski growth of heavily indium-doped Si crystals and co-doping effects of group-IV elements
AU - Inoue, K.
AU - Taishi, T.
AU - Tokumoto, Y.
AU - Kutsukake, K.
AU - Ohno, Y.
AU - Ohsawa, T.
AU - Gotoh, R.
AU - Yonenaga, I.
N1 - Funding Information:
This work was supported in part by Grants for Excellent Graduate Schools, MEXT, Japan .
PY - 2014/5/1
Y1 - 2014/5/1
N2 - Heavily indium (In)-doped Si crystals were grown by the Czochralski method under a consideration of the effects of co-doping of electrically neutral group-IV elements (C, Ge or Sn). The In concentration in In-doped Si increased with the amount of In charged into the crucible and reached 3.5×10 17 cm-3. The carrier concentration was at most 6×1016 cm-3, limited by the low ionization ratio of ~20% of In. Co-doping of C and Ge effectively enhanced the In concentration while Sn did not, which was examined in terms of the atomistic size, lattice parameter change, mutual bonding energy and solubility of group-IV elements in Si. However, no sufficient increase in carrier concentrations was detected in Si by the co-doping, and formation of some clusters or complexes was suggested.
AB - Heavily indium (In)-doped Si crystals were grown by the Czochralski method under a consideration of the effects of co-doping of electrically neutral group-IV elements (C, Ge or Sn). The In concentration in In-doped Si increased with the amount of In charged into the crucible and reached 3.5×10 17 cm-3. The carrier concentration was at most 6×1016 cm-3, limited by the low ionization ratio of ~20% of In. Co-doping of C and Ge effectively enhanced the In concentration while Sn did not, which was examined in terms of the atomistic size, lattice parameter change, mutual bonding energy and solubility of group-IV elements in Si. However, no sufficient increase in carrier concentrations was detected in Si by the co-doping, and formation of some clusters or complexes was suggested.
KW - A1. Doping
KW - A1. Impurities
KW - A1. Segregation
KW - A1. Solubility
KW - A2. Czochralski method
KW - B2. Semiconducting silicon
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U2 - 10.1016/j.jcrysgro.2013.10.033
DO - 10.1016/j.jcrysgro.2013.10.033
M3 - Article
AN - SCOPUS:84898003056
SN - 0022-0248
VL - 393
SP - 45
EP - 48
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -