Czochralski growth of heavily tin-doped Si crystals

I. Yonenaga; T. Taishi; K. Inoue; R. Gotoh; K. Kutsukake; Y. Tokumoto; Y. Ohno

doi:10.1016/j.jcrysgro.2014.02.052

Czochralski growth of heavily tin-doped Si crystals

I. Yonenaga, T. Taishi, K. Inoue, R. Gotoh, K. Kutsukake, Y. Tokumoto, Y. Ohno

Materials Design Division

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Heavily tin (Sn)-doped Si crystals in a concentration up to 4×10 ¹⁹ cm^-3 were grown by the Czochralski method. Variation of Sn concentration in the crystals was well expressed by the Pfann equation using a segregation coefficient of k=0.016. From the occurrence of growth interface instability and the appearance of Sn precipitates in the grown crystals, the solubility limit of Sn was considered to be around 5×10¹⁹ cm^-3. Interstitially dissolved oxygen O_i was presented at a concentration of 8-9×10¹⁷ cm^-3 in the grown Sn-doped crystals. The FT-IR absorption peak relating to a Si-O_i-Si quasi-molecule at 1106 cm^-1 showed preferential occupation of O _i at the bond-centered position of Si-Si. The O_i peak shifted to the lower wave number side with increasing Sn concentration in Si, implying expansion of the Si-Si bond.

Original language	English
Pages (from-to)	94-97
Number of pages	4
Journal	Journal of Crystal Growth
Volume	395
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.02.052
Publication status	Published - 2014 Jun 1

Keywords

A1. Doping
A1. Impurities
A1. Segregation
A1. Solubility
A2. Czochralski method
B2. Semiconducting silicon

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2014.02.052

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@article{2390c2eb6d8c476cb3350cd8007adb87,

title = "Czochralski growth of heavily tin-doped Si crystals",

abstract = "Heavily tin (Sn)-doped Si crystals in a concentration up to 4×10 19 cm-3 were grown by the Czochralski method. Variation of Sn concentration in the crystals was well expressed by the Pfann equation using a segregation coefficient of k=0.016. From the occurrence of growth interface instability and the appearance of Sn precipitates in the grown crystals, the solubility limit of Sn was considered to be around 5×1019 cm-3. Interstitially dissolved oxygen Oi was presented at a concentration of 8-9×1017 cm-3 in the grown Sn-doped crystals. The FT-IR absorption peak relating to a Si-Oi-Si quasi-molecule at 1106 cm-1 showed preferential occupation of O i at the bond-centered position of Si-Si. The Oi peak shifted to the lower wave number side with increasing Sn concentration in Si, implying expansion of the Si-Si bond.",

keywords = "A1. Doping, A1. Impurities, A1. Segregation, A1. Solubility, A2. Czochralski method, B2. Semiconducting silicon",

author = "I. Yonenaga and T. Taishi and K. Inoue and R. Gotoh and K. Kutsukake and Y. Tokumoto and Y. Ohno",

year = "2014",

month = jun,

day = "1",

doi = "10.1016/j.jcrysgro.2014.02.052",

language = "English",

volume = "395",

pages = "94--97",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Czochralski growth of heavily tin-doped Si crystals

AU - Yonenaga, I.

AU - Taishi, T.

AU - Inoue, K.

AU - Gotoh, R.

AU - Kutsukake, K.

AU - Tokumoto, Y.

AU - Ohno, Y.

PY - 2014/6/1

Y1 - 2014/6/1

N2 - Heavily tin (Sn)-doped Si crystals in a concentration up to 4×10 19 cm-3 were grown by the Czochralski method. Variation of Sn concentration in the crystals was well expressed by the Pfann equation using a segregation coefficient of k=0.016. From the occurrence of growth interface instability and the appearance of Sn precipitates in the grown crystals, the solubility limit of Sn was considered to be around 5×1019 cm-3. Interstitially dissolved oxygen Oi was presented at a concentration of 8-9×1017 cm-3 in the grown Sn-doped crystals. The FT-IR absorption peak relating to a Si-Oi-Si quasi-molecule at 1106 cm-1 showed preferential occupation of O i at the bond-centered position of Si-Si. The Oi peak shifted to the lower wave number side with increasing Sn concentration in Si, implying expansion of the Si-Si bond.

AB - Heavily tin (Sn)-doped Si crystals in a concentration up to 4×10 19 cm-3 were grown by the Czochralski method. Variation of Sn concentration in the crystals was well expressed by the Pfann equation using a segregation coefficient of k=0.016. From the occurrence of growth interface instability and the appearance of Sn precipitates in the grown crystals, the solubility limit of Sn was considered to be around 5×1019 cm-3. Interstitially dissolved oxygen Oi was presented at a concentration of 8-9×1017 cm-3 in the grown Sn-doped crystals. The FT-IR absorption peak relating to a Si-Oi-Si quasi-molecule at 1106 cm-1 showed preferential occupation of O i at the bond-centered position of Si-Si. The Oi peak shifted to the lower wave number side with increasing Sn concentration in Si, implying expansion of the Si-Si bond.

KW - A1. Doping

KW - A1. Impurities

KW - A1. Segregation

KW - A1. Solubility

KW - A2. Czochralski method

KW - B2. Semiconducting silicon

UR - http://www.scopus.com/inward/record.url?scp=84898078000&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898078000&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2014.02.052

DO - 10.1016/j.jcrysgro.2014.02.052

M3 - Article

AN - SCOPUS:84898078000

SN - 0022-0248

VL - 395

SP - 94

EP - 97

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Czochralski growth of heavily tin-doped Si crystals

Abstract

Keywords

ASJC Scopus subject areas

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