De Haas-van Alphen effect in GdAs

Y. Nakanishi; F. Takahashi; T. Sakon; M. Yoshida; D. X. Li; T. Suzuki; M. Motokawa

doi:10.1016/S0921-4526(99)01030-3

De Haas-van Alphen effect in GdAs

Y. Nakanishi, F. Takahashi, T. Sakon, M. Yoshida, D. X. Li, T. Suzuki, M. Motokawa

IMR - Materials Processing and Characterization Division

Tohoku University

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

We have for the first time observed de Haas-van Alphen effect in GdAs below the Neel temperature in magnetic fields up to 15 T. The Fermi surface consists of three ellipsoidal electron surfaces and a spherical surface. We have also determined the corresponding effective masses and mean free paths. Furthermore, by analyzing the angular dependence of Fermi surface, the number of carriers belonging to each Fermi surface is estimated. It is consistent with that measured by the Hall effect. In GdX as the lattice constant is increased, the number of carriers decreases. On the other hand, however, GdAs has less carrier concentration compared to that of GdSb.

Original language	English
Pages (from-to)	750-751
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	281-282
DOIs	https://doi.org/10.1016/S0921-4526(99)01030-3
Publication status	Published - 2000 Jun 1
Event	Yamada Conference LI - The International Conference on Strongly Correlated Electron Systems (SCES '99) - Nagano, Jpn Duration: 1999 Aug 24 → 1999 Aug 28

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@article{1ce09ac59ece401c86d98f35bf0564ce,

title = "De Haas-van Alphen effect in GdAs",

abstract = "We have for the first time observed de Haas-van Alphen effect in GdAs below the Neel temperature in magnetic fields up to 15 T. The Fermi surface consists of three ellipsoidal electron surfaces and a spherical surface. We have also determined the corresponding effective masses and mean free paths. Furthermore, by analyzing the angular dependence of Fermi surface, the number of carriers belonging to each Fermi surface is estimated. It is consistent with that measured by the Hall effect. In GdX as the lattice constant is increased, the number of carriers decreases. On the other hand, however, GdAs has less carrier concentration compared to that of GdSb.",

author = "Y. Nakanishi and F. Takahashi and T. Sakon and M. Yoshida and Li, {D. X.} and T. Suzuki and M. Motokawa",

year = "2000",

month = jun,

day = "1",

doi = "10.1016/S0921-4526(99)01030-3",

language = "English",

volume = "281-282",

pages = "750--751",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

note = "Yamada Conference LI - The International Conference on Strongly Correlated Electron Systems (SCES '99) ; Conference date: 24-08-1999 Through 28-08-1999",

}

TY - JOUR

T1 - De Haas-van Alphen effect in GdAs

AU - Nakanishi, Y.

AU - Takahashi, F.

AU - Sakon, T.

AU - Yoshida, M.

AU - Li, D. X.

AU - Suzuki, T.

AU - Motokawa, M.

PY - 2000/6/1

Y1 - 2000/6/1

N2 - We have for the first time observed de Haas-van Alphen effect in GdAs below the Neel temperature in magnetic fields up to 15 T. The Fermi surface consists of three ellipsoidal electron surfaces and a spherical surface. We have also determined the corresponding effective masses and mean free paths. Furthermore, by analyzing the angular dependence of Fermi surface, the number of carriers belonging to each Fermi surface is estimated. It is consistent with that measured by the Hall effect. In GdX as the lattice constant is increased, the number of carriers decreases. On the other hand, however, GdAs has less carrier concentration compared to that of GdSb.

AB - We have for the first time observed de Haas-van Alphen effect in GdAs below the Neel temperature in magnetic fields up to 15 T. The Fermi surface consists of three ellipsoidal electron surfaces and a spherical surface. We have also determined the corresponding effective masses and mean free paths. Furthermore, by analyzing the angular dependence of Fermi surface, the number of carriers belonging to each Fermi surface is estimated. It is consistent with that measured by the Hall effect. In GdX as the lattice constant is increased, the number of carriers decreases. On the other hand, however, GdAs has less carrier concentration compared to that of GdSb.

UR - http://www.scopus.com/inward/record.url?scp=0033893128&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033893128&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)01030-3

DO - 10.1016/S0921-4526(99)01030-3

M3 - Conference article

AN - SCOPUS:0033893128

SN - 0921-4526

VL - 281-282

SP - 750

EP - 751

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Yamada Conference LI - The International Conference on Strongly Correlated Electron Systems (SCES '99)

Y2 - 24 August 1999 through 28 August 1999

ER -

De Haas-van Alphen effect in GdAs

Abstract

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