De Haas–van Alphen Oscillations for Small Electron Pocket Fermi Surfaces and Huge H-linear Magnetoresistances in Degenerate Semiconductors PbTe and PbS

Shoya Kawakatsu, Kenri Nakaima, Masashi Kakihana, Yui Yamakawa, Hayato Miyazato, Takanori Kida, Time Tahara, Masayuki Hagiwara, Tetsuya Takeuchi, Dai Aoki, Ai Nakamura, Yasutomi Tatetsu, Takahiro Maehira, Masato Hedo, Takao Nakama, Yoshichika Ōnuki

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The degenerate semiconductor PbTe with a NaCl-type cubic structure is found to exhibit a huge H-linear magnetoresistance Δρ=ρ in magnetic fields up to the highest applied field of 500 kOe, revealing Δρ=ρ = 270 at 500 kOe, with Shubnikov–de Haas (SdH) oscillations. The present magnetoresistance is due to small nearly ellipsoidal electron Fermi surfaces at the L point in the fcc Brillouin zone. A magnetic field of 350 kOe corresponds to the quantum limit (Landau level l = 0) for the fundamental SdH oscillations, leaving only the lowest down-spin Landau level in higher magnetic fields. We clarified the present Fermi surfaces by a de Haas–van Alphen experiment and relativistic linearized augmented plane wave energy band calculation. Similar results were obtained for PbS with small nearly spherical electron Fermi surfaces.

Original languageEnglish
Journaljournal of the physical society of japan
Volume88
Issue number1
DOIs
Publication statusPublished - 2019

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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