Abstract
Decay behavior of photo-induced defects in a Ge-doped SiO2 glass with photosensitivity and 2nd-order optical nonlinearity has been presented. It has been found that the decay of induced GeE′ in a UV-irradiated glass is quite different from that in a UV-poled glass.
Original language | English |
---|---|
Pages | 141-142 |
Number of pages | 2 |
Publication status | Published - 1998 |
Event | Proceedings of the 1998 24th European Conference on Optical Communication, ECOC. Part 1 (of 3) - Madrid, Spain Duration: 1998 Sept 20 → 1998 Sept 24 |
Conference
Conference | Proceedings of the 1998 24th European Conference on Optical Communication, ECOC. Part 1 (of 3) |
---|---|
City | Madrid, Spain |
Period | 98/9/20 → 98/9/24 |