Decomposition of 1/f noise in AlxGa1-xAs/GaAs hall devices

Jens Müller, Stephan Von Molnár, Yuzo Ohno, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


We present a systematic study of the low-frequency noise in micron and submicron Hall devices made from AlxGa1-xAs/GaAs heterostructures. In a sample with feature size as small as 0.45μm we observe a nonmonotonic temperature dependence of the noise power spectral densities (PSD's) at temperatures where surface states and deep-level excitations are frozen out. Near the temperature where the noise peaks, the PSD's can be described by a thermally activated two-level random telegraph signal, i.e., the 1/f noise originating from switching events in the highly doped AlxGa1-xAs layer is resolved into a single Lorentzian spectrum.

Original languageEnglish
Article number186601
JournalPhysical Review Letters
Issue number18
Publication statusPublished - 2006


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