TY - JOUR
T1 - Decomposition of 1/f noise in AlxGa1-xAs/GaAs hall devices
AU - Müller, Jens
AU - Von Molnár, Stephan
AU - Ohno, Yuzo
AU - Ohno, Hideo
PY - 2006
Y1 - 2006
N2 - We present a systematic study of the low-frequency noise in micron and submicron Hall devices made from AlxGa1-xAs/GaAs heterostructures. In a sample with feature size as small as 0.45μm we observe a nonmonotonic temperature dependence of the noise power spectral densities (PSD's) at temperatures where surface states and deep-level excitations are frozen out. Near the temperature where the noise peaks, the PSD's can be described by a thermally activated two-level random telegraph signal, i.e., the 1/f noise originating from switching events in the highly doped AlxGa1-xAs layer is resolved into a single Lorentzian spectrum.
AB - We present a systematic study of the low-frequency noise in micron and submicron Hall devices made from AlxGa1-xAs/GaAs heterostructures. In a sample with feature size as small as 0.45μm we observe a nonmonotonic temperature dependence of the noise power spectral densities (PSD's) at temperatures where surface states and deep-level excitations are frozen out. Near the temperature where the noise peaks, the PSD's can be described by a thermally activated two-level random telegraph signal, i.e., the 1/f noise originating from switching events in the highly doped AlxGa1-xAs layer is resolved into a single Lorentzian spectrum.
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U2 - 10.1103/PhysRevLett.96.186601
DO - 10.1103/PhysRevLett.96.186601
M3 - Article
AN - SCOPUS:33646394597
SN - 0031-9007
VL - 96
JO - Physical Review Letters
JF - Physical Review Letters
IS - 18
M1 - 186601
ER -