Decomposition of on-current variability of nMOS FinFETs for prediction beyond 20 nm

Takashi Matsukawa, Yongxun Liu, Shin Ichi O'Uchi, Kazuhiko Endo, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Hiroyuki Ota, Shinji Migita, Yukinori Morita, Wataru Mizubayashi, Kunihiro Sakamoto, Meishoku Masahara

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

ON-current (I on) variability is comprehensively investigated for fin-shaped FETs (FinFETs) by measurement-based analysis. Variation sources of I on are successfully extracted as independent contributions of threshold voltage V t, transconductance G m, and parasitic resistance R para. As well as V t variability, G m variation exhibits a linear relationship in the Pelgrom plot. However, the G m variation is not reduced with scaling the gate dielectric thickness unlike the V t variation. Perspective for 14-nm FinFETs represents that the G m variation will be the dominant I on variation source. A solution to reduce the G m variation for the FinFET is also proposed.

Original languageEnglish
Article number6202330
Pages (from-to)2003-2010
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume59
Issue number8
DOIs
Publication statusPublished - 2012

Keywords

  • Fin-shaped field-effect transistor (FinFET)
  • mobility
  • on-current
  • parasitic resistance
  • scaling
  • transconductance
  • variability

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