Deep levels in strongly Si-compensated GaAs and AlGaAs

Tadashige Sato; Toshio Ishiwatari

doi:10.1063/1.1462847

Deep levels in strongly Si-compensated GaAs and AlGaAs

Tadashige Sato, Toshio Ishiwatari

IMR - Institute for Materials Research (institute affiliation only)

Mitsubishi Chemical Holdings Corporation

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Five electron traps were detected successfully in heavily Si-doped GaAs and Al_xGa_1-xAs of low Al content with a Si concentration of above 1×10¹⁹ cm^-3 using deep level transient spectroscopy. The junctions were grown by liquid phase epitaxy and were strongly compensated. The traps were investigated for functions of the Si concentration and the AlAs mole fraction. The traps are discussed in terms using their spectra and concentration as opposed to the previous results which used point defects in the GaAs and AlGaAs. The traps show distinctive features, which can be attributed to strongly Si-compensated crystals. Three traps among them were confirmed to be DX centers.

Original language	English
Pages (from-to)	5158-5162
Number of pages	5
Journal	Journal of Applied Physics
Volume	91
Issue number	8
DOIs	https://doi.org/10.1063/1.1462847
Publication status	Published - 2002 Apr 15

Access to Document

10.1063/1.1462847

Cite this

@article{fff48f43613d43e6bba6b3dfb88d3664,

title = "Deep levels in strongly Si-compensated GaAs and AlGaAs",

abstract = "Five electron traps were detected successfully in heavily Si-doped GaAs and AlxGa1-xAs of low Al content with a Si concentration of above 1×1019 cm-3 using deep level transient spectroscopy. The junctions were grown by liquid phase epitaxy and were strongly compensated. The traps were investigated for functions of the Si concentration and the AlAs mole fraction. The traps are discussed in terms using their spectra and concentration as opposed to the previous results which used point defects in the GaAs and AlGaAs. The traps show distinctive features, which can be attributed to strongly Si-compensated crystals. Three traps among them were confirmed to be DX centers.",

author = "Tadashige Sato and Toshio Ishiwatari",

year = "2002",

month = apr,

day = "15",

doi = "10.1063/1.1462847",

language = "English",

volume = "91",

pages = "5158--5162",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Deep levels in strongly Si-compensated GaAs and AlGaAs

AU - Sato, Tadashige

AU - Ishiwatari, Toshio

PY - 2002/4/15

Y1 - 2002/4/15

N2 - Five electron traps were detected successfully in heavily Si-doped GaAs and AlxGa1-xAs of low Al content with a Si concentration of above 1×1019 cm-3 using deep level transient spectroscopy. The junctions were grown by liquid phase epitaxy and were strongly compensated. The traps were investigated for functions of the Si concentration and the AlAs mole fraction. The traps are discussed in terms using their spectra and concentration as opposed to the previous results which used point defects in the GaAs and AlGaAs. The traps show distinctive features, which can be attributed to strongly Si-compensated crystals. Three traps among them were confirmed to be DX centers.

AB - Five electron traps were detected successfully in heavily Si-doped GaAs and AlxGa1-xAs of low Al content with a Si concentration of above 1×1019 cm-3 using deep level transient spectroscopy. The junctions were grown by liquid phase epitaxy and were strongly compensated. The traps were investigated for functions of the Si concentration and the AlAs mole fraction. The traps are discussed in terms using their spectra and concentration as opposed to the previous results which used point defects in the GaAs and AlGaAs. The traps show distinctive features, which can be attributed to strongly Si-compensated crystals. Three traps among them were confirmed to be DX centers.

UR - http://www.scopus.com/inward/record.url?scp=0037091506&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037091506&partnerID=8YFLogxK

U2 - 10.1063/1.1462847

DO - 10.1063/1.1462847

M3 - Article

AN - SCOPUS:0037091506

SN - 0021-8979

VL - 91

SP - 5158

EP - 5162

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Deep levels in strongly Si-compensated GaAs and AlGaAs

Abstract

Access to Document

Other files and links

Fingerprint

Cite this