Deep reactive ion etching of silicon carbide

More than 100-μm-deep reaction ion etching (RIE) of silicon carbide (SiC) for microelectromechanical systems used in harsh environments were performed. Sulfur hexafluoride mixed with oxygen was used as an etching gas and electroplated nickel was used as a mask. First, 5 h etching experiments using etching gases with 0%, 5%, and 20% oxygen were performed by supplying rf power of 150 and 130 W to an ICP antenna and a sample stage. Following this, a 7 h etching experiment using an etching gas with 5% oxygen was performed by increasing the rf power to the sample stage of 150 W. The resulting data was analyzed in detail.