In order to confirm benefits of a deep sub-micron FD-SOI and to identify possible issues concerning front-end circuits with the FD-SOI, we have submitted a small design to Oki Electric Industry Co., Ltd. via the multi-chip project service of VDEC, the University of Tokyo. The initial test results and future plans for development are presented.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|Issue number||2 SPEC. ISS.|
|Publication status||Published - 2007 Sept 1|
- CMOS analog
- Deep sub-micron CMOS
- Radiation effect