Deep sub-micron FD-SOI for front-end application

H. Ikeda, Y. Arai, K. Hara, H. Hayakawa, K. Hirose, Y. Ikegami, H. Ishino, Y. Kasaba, T. Kawasaki, T. Kohriki, E. Martin, H. Miyake, A. Mochizuki, H. Tajima, O. Tajima, T. Takahashi, T. Takashima, S. Terada, H. Tomita, T. TsuboyamaY. Unno, H. Ushiroda, G. Varner

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


In order to confirm benefits of a deep sub-micron FD-SOI and to identify possible issues concerning front-end circuits with the FD-SOI, we have submitted a small design to Oki Electric Industry Co., Ltd. via the multi-chip project service of VDEC, the University of Tokyo. The initial test results and future plans for development are presented.

Original languageEnglish
Pages (from-to)701-705
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number2 SPEC. ISS.
Publication statusPublished - 2007 Sept 1


  • CMOS analog
  • Deep sub-micron CMOS
  • FD-SOI
  • Front-end
  • Radiation effect


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