We demonstrated the selective introduction of interstitial Zn defects (Zn i) into willemite-type semiconductive Zn2GeO4 by nanocrystallization of 15Li2O-15ZnO-70GeO2 glass. The resulting nanocrystallized glass consisting of Zn2GeO4 exhibited a long-lasting photoluminescence (LLP). It is suggested that the Zni̇ is produced by capturing a zinc ion through six-membered rings of the Zn2GeO4 phase during nanocrystallization and the excess Zni̇ acts as an electron trap for the LLP. This defect activation through nanocrystallization is a promising new approach to functionalization.
|Journal||Applied Physics Letters|
|Publication status||Published - 2010 Aug 16|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)