@article{6ad8a213dc814491a795c30883298ed1,
title = "Defect-Resistant Radiative Performance of m-Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters",
keywords = "deep-ultraviolet light, immiscible alloys, localization, nonradiative recombination, point defects, polarized light emitters, radiative recombination",
author = "Chichibu, {Shigefusa F.} and Kazunobu Kojima and Akira Uedono and Yoshitaka Sato",
note = "Funding Information: S.F.C. would like to thank K. Hazu, T. Onuma, K. Furusawa, Y. Ishikawa, Y. Yamazaki, and T. Ohtomo for help with the experiments and H. Ikeda and K. Fujito of Mitsubishi Chemical Corporation for providing the m-plane GaN substrate. This work was supported in part by The Asahi Glass Foundation, Management Expenses Grants for National Universities Corporations and JSPS KAKENHI Grant Nos. JP16H06427 and 15K13344 by the Ministry of Education, Culture, Sports, Science and Technology, and New Energy and Industrial Technology Development Organization programs by the Ministry of Economy, Trade, and Industry, Japan. K. Kojima carried out TRPL measurement; Y. Sato installed the Al1−xInxN nanostructures on VFD devices; A. Uedono carried out PAS measurement; S. F. Chichibu grew Al1−ganized this research project.",
year = "2017",
month = feb,
doi = "10.1002/adma.201603644",
language = "English",
volume = "29",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-Blackwell",
number = "5",
}