Defect states in Lu3GaxAl5- xO12 crystals and powders

E. Mihokova, A. Vedda, M. Fasoli, F. Moretti, A. L. Bulin, M. Nikl, M. Bettinelli, A. Speghini, H. Ogino, A. Yoshikawa

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11 Citations (Scopus)


We study defect states in undoped and Eu3+-doped Lu 3GaxAl5-xO12 (x = 0-5) garnet crystals by wavelength resolved thermally stimulated luminescence above room temperature. Eu3+ ions act not only as recombination centres but also as high temperature traps, as testified by the presence of a TSL peak at 450 °C correlated with Eu3+-doping. With increasing gallium content all glow peaks are shifted to lower temperatures. This trend is confirmed also for powder samples prepared by sol-gel technique. The observed low temperature shift of the glow peaks can be considered as a consequence of the band gap reduction following the increase of Ga3+ concentration. The comparison with the glow curve of a Ce3+-doped crystal is also shown.

Original languageEnglish
Pages (from-to)1298-1301
Number of pages4
JournalOptical Materials
Issue number10
Publication statusPublished - 2010 Aug


  • Oxides
  • Scintillation detectors
  • Thermoluminescence


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